SLVSDL0A May 2016 – July 2016 TPD1E1B04
The TPD1E1B04 is a bidirectional ESD Protection Diode with ultra-low clamping voltage. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 International Standard. The ultra-low clamping makes this device ideal for protecting any sensitive signal pins.
The I/O pins can withstand ESD events up to ±30-kV contact and ±30-kV air gap. An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-Ω impedance). An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand surge events up to 6.3 A and 50 W (8/20 µs waveform). An ESD-surge clamp diverts this current to ground.
The capacitance between each I/O pin to ground is 1 pF (typical) and 1.3 pF (maximum).
The DC breakdown voltage of each I/O pin is ±6.4 V typical. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of ±3.6 V.
The I/O pins feature an low leakage current of 100 nA (maximum) with a bias of ±2.5 V.
The I/O pins feature an ESD clamp that is capable of clamping the voltage to 8.5 V (IPP = 16 A).
This device features an industrial operating range of –40°C to +125°C.
The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers flow-through routing, requiring minimal modification to an existing layout.
The TPD1E1B04 is a passive integrated circuit that triggers when voltages are above VBRF or below VBRR. During ESD events, voltages as high as ±30 kV (contact or air) can be directed to ground via the internal diode network. When the voltages on the protected line fall below the trigger levels of TPD1E1B04 (usually within 10s of nano-seconds) the device reverts to passive.