SLVSCF6F April   2014  – May 2019

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      TPD1S514 Family Circuit Protection Scheme
      2.      TPD1S514 Family Block Diagram
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Consumption
    6. 7.6  Electrical Characteristics EN Pin
    7. 7.7  Thermal Shutdown Feature
    8. 7.8  Electrical Characteristics nFET Switch
    9. 7.9  Electrical Characteristics OVP Circuit
    10. 7.10 Electrical Characteristics VBUS_POWER Circuit
    11. 7.11 Timing Requirements
    12. 7.12 TPD1S514-1 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Over Voltage Protection on VBUS_CON up to 30 V DC
      2. 8.3.2  Precision OVP (< ±1% Tolerance)
      3. 8.3.3  Low RON nFET Switch Supports Host and Charging Mode
      4. 8.3.4  VBUS_POWER, TPD1S514-1, TPD1S514-2, TPD1S514-3
      5. 8.3.5  VBUS_POWER, TPD1S514
      6. 8.3.6  Powering the System When Battery is Discharged
      7. 8.3.7  ±15 kV IEC 61000-4-2 Level 4 ESD Protection
      8. 8.3.8  100 V IEC 61000-4-5 µs Surge Protection
      9. 8.3.9  Startup and OVP Recovery Delay
      10. 8.3.10 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation With VBUS_CON < 3.5 V (Minimum VBUS_CON)
      2. 8.4.2 Operation With VBUS_CON > VOVP
      3. 8.4.3 OTG Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 TPD1S514-1 USB 2.0/3.0 Case 1: Always Enabled
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 VBUS Voltage Range
          2. 9.2.1.2.2 Discharged Battery
        3. 9.2.1.3 Application Curves
      2. 9.2.2 TPD1S514-1 USB 2.0/3.0 Case 2: PMIC Controlled EN
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 VBUS Voltage Range
          2. 9.2.2.2.2 PMIC Power Requirement
          3. 9.2.2.2.3 Discharged Battery
        3. 9.2.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Community Resources
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Package Option Addendum
      1. 13.1.1 Packaging Information
      2. 13.1.2 Tape and Reel Information

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZ|12
Thermal pad, mechanical data (Package|Pins)

Supply Current Consumption

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS DEVICE NAME TYP MAX UNIT
IVBUS_SLEEP VBUS_CON Operating Current Consumption Measured at VBUS_CON pin,
EN = 5 V
VBUS_CON = 5 V TPD1S514-1 150 245 µA
VBUS_CON = 9 V TPD1S514-2 176 281
VBUS_CON = 12 V TPD1S514-3 195 335
VBUS_CON = 5 V TPD1S514 150 245
IVBUS Measured at VBUS_CON pin,
EN = 0 V and no load
VBUS_CON = 5 V TPD1S514-1 228 354 µA
VBUS_CON = 9 V TPD1S514-2 250 413
VBUS_CON = 12 V TPD1S514-3 270 456
VBUS_CON = 5 V TPD1S514 228 354
IVBUS_SYS VBUS_SYS operating current consumption Measured at VBUS_SYS pin,
VBUS_CON = Hi-Z, EN = 0 V
VBUS_SYS = 5 V TPD1S514-1 210 354 µA
VBUS_SYS = 9 V TPD1S514-2 250 424
VBUS_SYS = 12 V TPD1S514-3 333 461
VBUS_SYS = 5 V TPD1S514 210 354
IHOST_LEAK Host mode leakage current Measured at VBUS_SYS pin,
VBUS_CON = Hi-Z, EN = 5 V
VBUS_SYS = 5 V TPD1S514-1 90 218 µA
VBUS_SYS = 9 V TPD1S514-2 290 491
VBUS_SYS = 12 V TPD1S514-3 506 696
VBUS_SYS = 5 V TPD1S514 90 218