SLVSCT5D March   2015  – September 2016 TPS22953 , TPS22954

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Electrical Characteristics—VBIAS = 5 V
    7. 7.7  Electrical Characteristics—VBIAS = 3.3 V
    8. 7.8  Electrical Characteristics—VBIAS = 2.5 V
    9. 7.9  Switching Characteristics—CT = 1000 pF
    10. 7.10 Switching Characteristics—CT = 0 pF
    11. 7.11 Typical DC Characteristics
    12. 7.12 Typical Switching Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  On and Off Control (EN pin)
      2. 9.3.2  Voltage Monitoring (SNS Pin)
      3. 9.3.3  Power Good (PG Pin)
      4. 9.3.4  Supervisor Fault Detection and Automatic Restart
      5. 9.3.5  Manual Restart
      6. 9.3.6  Thermal Shutdown
      7. 9.3.7  Reverse Current Blocking (TPS22953 Only)
      8. 9.3.8  Quick Output Discharge (QOD) (TPS22954 Only)
      9. 9.3.9  VIN and VBIAS Voltage Range
      10. 9.3.10 Adjustable Rise Time (CT pin)
      11. 9.3.11 Power Sequencing
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Input to Output Voltage Drop
      2. 10.1.2 Thermal Considerations
      3. 10.1.3 Automatic Power Sequencing
      4. 10.1.4 Monitoring a Downstream Voltage
      5. 10.1.5 Monitoring the Input Voltage
      6. 10.1.6 Break-Before-Make Power MUX (TPS22953 Only)
      7. 10.1.7 Make-Before-Break Power MUX (TPS22953 Only)
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Inrush Current
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Related Links
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VIN Input voltage –0.3 6 V
VBIAS Bias voltage –0.3 6 V
VOUT Output voltage –0.3 6 V
VEN, VSNS, VPG EN, SNS, and PG voltage –0.3 6 V
IMAX Maximum continuous switch current, TA = 70°C 5 A
IPLS Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle 7 A
TJ,MAX Maximum junction temperature Internally limited (2)
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) See TSD specification in the Electrical Characteristics section and Thermal Considerations section.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

7.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input voltage 0.7 VBIAS V
VBIAS Bias voltage 2.5 5.7 V
VOUT Output voltage 0 5.7 V
VEN, VSNS, VPG EN, SNS, and PG voltage 0 5.7 V
TA (1) Operating free-air temperature –40 105 °C
TJ Operating junction temperature –40 125 °C
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA(max) = TJ(max) – (θJA × PD(max))

7.4 Thermal Information

THERMAL METRIC(1) TPS22953/54 UNIT
DQC (WSON) DSQ (WSON)
10 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 65.2 63.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 73.9 81.6 °C/W
RθJB Junction-to-board thermal resistance 25.5 34.1 °C/W
ψJT Junction-to-top characterization parameter 2 1.9 °C/W
ψJB Junction-to-board characterization parameter 25.4 34.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 8.5 7.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40 °C ≤ TA ≤ +105 °C and the recommended VBIAS voltage range of 2.5 V to 5.7 V. Typical values are for TA = 25°C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
VOLTAGE THRESHOLDS
VEN VIH, Rising threshold VIN = 0.7 V to VBIAS –40°C to +105°C 650 700 750 mV
VIL, Falling threshold VIN = 0.7 V to VBIAS –40°C to +105°C 560 600 640 mV
VSNS VIH, Rising threshold VIN = 0.7 V to VBIAS –40°C to +105°C 465 515 565 mV
VIL, Falling threshold VIN = 0.7 V to VBIAS –40°C to +105°C 410 455 500 mV
TIMINGS
tBLANK Blanking time for EN and SNS EN or SNS rising –40°C to +105°C 100 µs
tDEGLITCH Deglitch time for EN and SNS EN or SNS falling –40°C to +105°C 5 µs
tDIS Output discharge time (TPS22954 only) CL = 100 µF –40°C to +105°C 10 ms
tRESTART Output restart time SNS falling –40°C to +105°C 2 ms
tRCB Response time for reverse current blocking
(TPS22953 only)		 VOUT = VBIAS
EN falling		 –40°C to +105°C 10 µs
THERMAL CHARACTERISTICS
TSD Thermal shutdown Junction temperature rising — 130 150 170 °C
TSDHYS Thermal shutdown hysteresis Junction temperature falling — 20 °C
REVERSE CURRENT BLOCKING
IRCB,IN Input reverse blocking current (TPS22953 only) VOUT = 5 V, VIN = VEN = 0 V,
VBIAS = 0 V to 5.7 V		 25°C 0.01 2 µA
–40°C to +85°C 5 µA
–40°C to +105°C 11 µA

7.6 Electrical Characteristics—VBIAS = 5 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40 °C ≤ TA ≤ +105 °C and VBIAS = 5 V. Typical values are for TA = 25°C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ, BIAS BIAS quiescent current IOUT = 0, VIN = 0.7 V to VBIAS, VEN = 5 V –40°C to +85°C 34 45 µA
–40°C to +105°C 50
ISD, BIAS BIAS shutdown current VOUT = 0 V, VIN = 0.7 V to VBIAS,
VEN = 0 V to VIL		 –40°C to +85°C 5 7 µA
–40°C to +105°C 8 µA
ISD, IN Input shutdown current VEN = 0 V to VIL,
VOUT = 0 V		 VIN = 5 V –40°C to +85°C 0.02 4 µA
–40°C to +105°C 13
VIN = 3.3 V –40°C to +85°C 0.01 3
–40°C to +105°C 10
VIN = 1.8 V –40°C to +85°C 0.01 3
–40°C to +105°C 10
VIN = 1.2 V –40°C to +85°C 0.01 2
–40°C to +105°C 8
VIN = 0.7 V –40°C to +85°C 0.01 2
–40°C to +105°C 8
IEN EN pin input leakage current VEN = 0 V to 5.7 V –40°C to +105°C 0.1 µA
ISNS SNS pin input leakage current VSNS ≤ VBIAS –40°C to +105°C 0.1 µA
RESISTANCE CHARACTERISTICS
RON ON-state resistance IOUT = –200 mA VIN = 5 V 25°C 14 20 mΩ
–40°C to +85°C 23
–40°C to +105°C 24
VIN = 3.3 V 25°C 14 20 mΩ
–40°C to +85°C 23
–40°C to +105°C 24
VIN = 1.8 V 25°C 14 20 mΩ
–40°C to +85°C 23
–40°C to +105°C 24
VIN = 1.5 V 25°C 14 20 mΩ
–40°C to +85°C 23
–40°C to +105°C 24
VIN = 1.2 V 25°C 14 20 mΩ
–40°C to +85°C 23
–40°C to +105°C 24
VIN = 0.7 V 25°C 14 20 mΩ
–40°C to +85°C 23
–40°C to +105°C 24
RPD Output pulldown resistance (TPS22954 Only) VIN = VOUT = VBIAS, VEN = 0 V 25°C 15 28 Ω
–40°C to +105°C 30 Ω

7.7 Electrical Characteristics—VBIAS = 3.3 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40 °C ≤ TA ≤ +105 °C and VBIAS = 3.3 V. Typical values are for TA = 25°C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ, BIAS BIAS quiescent current IOUT = 0, VIN = 0.7 V to VBIAS, VEN = 5 V –40°C to +85°C 19 35 µA
–40°C to +105°C 37
ISD, BIAS BIAS shutdown current VOUT = 0 V, VIN = 0.7 V to VBIAS,
VEN = 0 V to VIL		 –40°C to +85°C 4 6 µA
–40°C to +105°C 7 µA
ISD, IN Input shutdown current VEN = 0 V to VIL,
VOUT = 0 V		 VIN = 3.3 V –40°C to +85°C 0.01 3 µA
–40°C to +105°C 10
VIN = 1.8 V –40°C to +85°C 0.01 3
–40°C to +105°C 10
VIN = 1.2 V –40°C to +85°C 0.01 2
–40°C to +105°C 8
VIN = 0.7 V –40°C to +85°C 0.01 2
–40°C to +105°C 8
IEN EN pin input leakage current VEN = 0 V to 5.7 V –40°C to +105°C 0.1 µA
ISNS SNS pin input leakage current VSNS ≤ VBIAS –40°C to +105°C 0.1 µA
RESISTANCE CHARACTERISTICS
RON ON-state resistance IOUT = –200 mA VIN = 3.3 V 25°C 15 21 mΩ
–40°C to +85°C 24
–40°C to +105°C 25
VIN = 1.8 V 25°C 14 20 mΩ
–40°C to +85°C 23
–40°C to +105°C 24
VIN = 1.5 V 25°C 14 20 mΩ
–40°C to +85°C 23
–40°C to +105°C 24
VIN = 1.2 V 25°C 14 20 mΩ
–40°C to +85°C 23
–40°C to +105°C 24
VIN = 0.7 V 25°C 14 20 mΩ
–40°C to +85°C 23
–40°C to +105°C 24
RPD Output pulldown resistance (TPS22954 Only) VIN = VOUT = VBIAS, VEN = 0 V 25°C 13 28 Ω
–40°C to +105°C 30 Ω

7.8 Electrical Characteristics—VBIAS = 2.5 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40 °C ≤ TA ≤ +105 °C and VBIAS = 2.5 V. Typical values are for TA = 25°C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ, BIAS BIAS quiescent current IOUT = 0, VIN = 0.7 V to VBIAS, VEN = 5 V –40°C to +85°C 16 25 µA
–40°C to +105°C 27
ISD, BIAS BIAS shutdown current VOUT = 0 V, VIN = 0.7 V to VBIAS,
VEN = 0 V to VIL		 –40°C to +85°C 4 5 µA
–40°C to +105°C 6 µA
ISD, IN Input shutdown current VEN = 0 V to VIL,
VOUT = 0 V		 VIN = 2.5 V –40°C to +85°C 0.01 3 µA
–40°C to +105°C 10
VIN = 1.8 V –40°C to +85°C 0.01 3
–40°C to +105°C 10
VIN = 1.2 V –40°C to +85°C 0.01 2
–40°C to +105°C 8
VIN = 0.7 V –40°C to +85°C 0.01 2
–40°C to +105°C 8
IEN EN pin input leakage current VEN = 0 V to 5.7 V –40°C to +105°C 0.1 µA
ISNS SNS pin input leakage current VSNS ≤ VBIAS –40°C to +105°C 0.1 µA
RESISTANCE CHARACTERISTICS
RON ON-state resistance IOUT = –200 mA VIN = 2.5 V 25°C 16 23 mΩ
–40°C to +85°C 26
–40°C to +105°C 27
VIN = 1.8 V 25°C 15 22 mΩ
–40°C to +85°C 25
–40°C to +105°C 26
VIN = 1.5 V 25°C 15 22 mΩ
–40°C to +85°C 25
–40°C to +105°C 26
VIN = 1.2 V 25°C 15 22 mΩ
-40°C to 85°C 24
–40°C to +105°C 25
VIN = 0.7 V 25°C 14 21 mΩ
–40°C to +85°C 24
–40°C to +105°C 25
RPD Output pulldown resistance (TPS22954 Only) VIN = VOUT = VBIAS, VEN = 0 V 25°C 12 28 Ω
–40°C to +105°C 30 Ω

7.9 Switching Characteristics—CT = 1000 pF

Refer to the timing test circuit in Figure 51 (unless otherwise noted) for references to external components used for the test condition in the switching characteristics table. Switching characteristics shown below are only valid for the power-up sequence where VIN and VBIAS are already in steady state condition before the EN terminal is asserted high.
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VIN = 5 V, VEN = VBIAS = 5 V, TA = 25°C
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 1265 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 6
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 1492
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 2.2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 519
VIN = 2.5 V, VEN = VBIAS = 5 V, TA = 25°C
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 813 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 6.1
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 765
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 2.2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 430
VIN = 0.7 V, VEN = VBIAS = 5 V, TA = 25°C
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 476 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 6.2
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 245
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 2.1
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 353
VIN = 2.5 V, VEN = 5 V, VBIAS = 2.5 V, TA = 25°C
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 813 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 4.9
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 765
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 2.2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 430
VIN = 0.7 V, VEN = 5 V, VBIAS = 2.5 V, TA = 25°C
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 476 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 6.1
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 245
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 2.1
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 353

7.10 Switching Characteristics—CT = 0 pF

Refer to the timing test circuit in Figure 51 (unless otherwise noted) for references to external components used for the test condition in the switching characteristics table. Switching characteristics shown below are only valid for the power-up sequence where VIN and VBIAS are already in steady state condition before the EN terminal is asserted high.
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VIN = 5 V, VEN = VBIAS = 5 V, TA = 25°C
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 235 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 6
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 140
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 2.2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 165
VIN = 2.5 V, VEN = VBIAS = 5 V, TA = 25°C
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 200 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 6
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 79
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 2.1
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 160
VIN = 0.7 V, VEN = VBIAS = 5 V, TA = 25°C
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 170 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 6
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 32
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 154
VIN = 2.5 V, VEN = 5 V, VBIAS = 2.5 V, TA = 25°C
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 200 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 6
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 79
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 2.1
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 160
VIN = 0.7 V, VEN = 5 V, VBIAS = 2.5 V, TA = 25°C
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 170 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 6
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 32
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF 154

7.11 Typical DC Characteristics

TPS22954 TPS22953 D001_SLVSCT5A.gif
VIN = 1.8 V VEN = 5.7 V VOUT = 0 V
Figure 1. IQ,BIAS vs VBIAS
TPS22954 TPS22953 D003_SLVSCT5A.gif
VIN = 1.8 V VEN = 0 V VOUT = 0 V
Figure 3. ISD,BIAS vs VBIAS
TPS22954 TPS22953 D035_SLVSCT5A.gif
VBIAS = 0 V to 5.7 V VEN = 0 V VIN = 0 V
Figure 5. IRCB,IN vs VOUT
TPS22954 TPS22953 D005_SLVSCT5A.gif
VBIAS = 2.5 V Iout = –200 mA VEN = 5 V
Figure 7. RON vs Temperature, VBIAS = 2.5 V
TPS22954 TPS22953 D008_SLVSCT5A.gif
VBIAS = 2.5 V Iout = –200 mA VEN = 5 V
Figure 9. RON vs VIN, VBIAS = 2.5 V
TPS22954 TPS22953 D010_SLVSCT5A.gif
VBIAS = 5 V Iout = –200 mA VEN = 5 V
Figure 11. RON vs VIN, VBIAS = 5 V
TPS22954 TPS22953 D032_SLVSCT5A.gif
VBIAS = 2.5 V VEN = 5 V
Figure 13. RON vs IOUT, VBIAS = 2.5 V
TPS22954 TPS22953 D034_SLVSCT5A.gif
VBIAS = 5 V VEN = 5 V
Figure 15. RON vs IOUT, VBIAS = 5 V
TPS22954 TPS22953 D013_SLVSCT5A.gif
VBIAS = 3.3 V VIN = VOUT VEN = 0 V
Figure 17. RPD vs VOUT, VBIAS = 3.3 V
TPS22954 TPS22953 D002_SLVSCT5A.gif
VBIAS = 5 V VEN = 5.7 V VOUT = 0 V
Figure 2. IQ,BIAS vs VIN
TPS22954 TPS22953 D004_SLVSCT5A.gif
VBIAS = 5 V VEN = 0 V VOUT = 0 V
Figure 4. ISD,IN vs VIN
TPS22954 TPS22953 D036_SLVSCT5A.gif
VBIAS = 0 V to 5.7 V VEN = 0 V VIN = 0 V
Figure 6. IRCB,IN vs VOUT
TPS22954 TPS22953 D006_SLVSCT5A.gif
VBIAS = 3.3 V Iout = –200 mA VEN = 5 V
Figure 8. RON vs Temperature, VBIAS = 3.3 V
TPS22954 TPS22953 D009_SLVSCT5A.gif
VBIAS = 3.3 V Iout = –200 mA VEN = 5 V
Figure 10. RON vs VIN, VBIAS = 3.3 V
TPS22954 TPS22953 D011_SLVSCT5A.gif
TA = 25°C Iout = –200 mA VEN = 5 V
Figure 12. RON vs VIN
TPS22954 TPS22953 D033_SLVSCT5A.gif
VBIAS = 3.3 V VEN = 5 V
Figure 14. RON vs IOUT, VBIAS = 3.3 V
TPS22954 TPS22953 D012_SLVSCT5A.gif
VBIAS = 2.5 V VIN = VOUT VEN = 0 V
Figure 16. RPD vs VOUT, VBIAS = 2.5 V
TPS22954 TPS22953 D014_SLVSCT5A.gif
VBIAS = 5 V VIN = VOUT VEN = 0 V
Figure 18. RPD vs VOUT, VBIAS = 5 V

7.12 Typical Switching Characteristics

TPS22954 TPS22953 D020_SLVSCT5A.gif
VBIAS = 2.5 V CT = 1000 pF VEN = Low to High
Figure 19. tR vs VIN , VBIAS = 2.5 V
TPS22954 TPS22953 D022_SLVSCT5A.gif
VBIAS = 2.5 V CT = 1000 pF VEN = High to Low
Figure 21. tF vs VIN , VBIAS = 2.5 V
TPS22954 TPS22953 D024_SLVSCT5A.gif
VBIAS = 2.5 V CT = 1000 pF VEN = Low to High
Figure 23. tON vs VIN , VBIAS = 2.5 V
TPS22954 TPS22953 D026_SLVSCT5A.gif
VBIAS = 2.5 V CT = 1000 pF VEN = High to Low
Figure 25. tOFF vs VIN , VBIAS = 2.5 V
TPS22954 TPS22953 D028_SLVSCT5A.gif
VBIAS = 2.5 V CT = 1000 pF VEN = Low to High
Figure 27. tD vs VIN , VBIAS = 2.5 V
TPS22954 TPS22953 D030_SLVSCT5A.gif
VIN = 2.5 V CT = 1000 pF VEN = Low to High
Figure 29. tR vs VBIAS
TPS22954 TPS22953 D021_SLVSCT5A.gif
VBIAS = 5 V CT = 1000 pF VEN = Low to High
Figure 20. tR vs VIN , VBIAS = 5 V
TPS22954 TPS22953 D023_SLVSCT5A.gif
VBIAS = 5 V CT = 1000 pF VEN = High to Low
Figure 22. tF vs VIN , VBIAS = 5 V
TPS22954 TPS22953 D025_SLVSCT5A.gif
VBIAS = 5 V CT = 1000 pF VEN = Low to High
Figure 24. tON vs VIN , VBIAS = 5 V
TPS22954 TPS22953 D027_SLVSCT5A.gif
VBIAS = 5 V CT = 1000 pF VEN = High to Low
Figure 26. tOFF vs VIN , VBIAS = 5 V
TPS22954 TPS22953 D029_SLVSCT5A.gif
VBIAS = 5 V CT = 1000 pF VEN =Low to High
Figure 28. tD vs VIN , VBIAS= 5 V

TPS22954 TPS22953 On_0p7V_2p5V.png
VIN = 0.7 V VBIAS = 2.5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 10 Ω
Figure 30. Turnon Waveform, VBIAS = 2.5 V
TPS22954 TPS22953 On_0p7V_5V.png
VIN = 0.7 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 10 Ω
Figure 32. Turnon Waveform, VBIAS = 5 V
TPS22954 TPS22953 On_2p5V_2p5V.png
VIN = 2.5 V VBIAS = 2.5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 10 Ω
Figure 34. Turnon Waveform, VBIAS = 2.5 V
TPS22954 TPS22953 On_2p5V_5V.png
VIN = 2.5 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 10 Ω
Figure 36. Turnon Waveform, VBIAS = 5 V
TPS22954 TPS22953 On_3p3V_5V.png
VIN = 3.3 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 10 Ω
Figure 38. Turnon Waveform, VBIAS = 5 V
TPS22954 TPS22953 On_5V_5V.png
VIN = 5 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 10 Ω
Figure 40. Turnon Waveform, VBIAS = 5 V
TPS22954 TPS22953 On_3p3V_5V_No_Load.png
VIN = 3.3 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = Open
Figure 42. Turnon Waveform, No Load
TPS22954 TPS22953 On_3.3V_5V_Heavy_Load.png
VIN = 3.3 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 1 Ω
Figure 44. Turnon Waveform, Heavy Load
TPS22954 TPS22953 SC_014tek075.png
VIN = 5 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 100 µF RL = 10 Ω
Figure 46. PG Response to EN Falling (tDEGLITCH)
TPS22954 TPS22953 SC_017tek077.png
VIN = 5 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 100 µF RL = 10 Ω
Figure 48. PG Response to SNS Rising (tBLANK)
TPS22954 TPS22953 SC_019tek078.png
VIN = 10 Ω to GND VBIAS = 5 V
CIN = 0.2 µF VOUT = 5 V
Figure 50. Reverse Current Blocking Response Time (tRCB)
TPS22954 TPS22953 Off_0p7V_2p5V.png
VIN = 0.7 V VBIAS = 2.5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 10 Ω
Figure 31. Turnoff Waveform, VBIAS = 2.5 V
TPS22954 TPS22953 Off_0p7V_5V.png
VIN = 0.7 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 10 Ω
Figure 33. Turnoff Waveform, VBIAS = 5 V
TPS22954 TPS22953 OFF_2p5V_2p5V.png
VIN = 2.5 V VBIAS = 2.5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 10 Ω
Figure 35. Turnoff Waveform, VBIAS = 2.5 V
TPS22954 TPS22953 Off_2p5V_5V.png
VIN = 2.5 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 10 Ω
Figure 37. Turnoff Waveform, VBIAS = 5 V
TPS22954 TPS22953 Off_3p3V_5V.png
VIN = 3.3 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 10 Ω
Figure 39. Turnoff Waveform, VBIAS = 5 V
TPS22954 TPS22953 Off_5V_5V.png
VIN = 5 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 10 Ω
Figure 41. Turnoff Waveform, VBIAS = 5 V
TPS22954 TPS22953 On_5V_5V_No_Load.png
VIN = 5 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = Open
Figure 43. Turnon Waveform, No Load
TPS22954 TPS22953 On_5V_5V_Heavy_Load.png
VIN = 5 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 0.1 µF RL = 1 Ω
Figure 45. Turnon Waveform, Heavy Load
TPS22954 TPS22953 SC_016tek076.png
VIN = 5 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 100 µF RL = 10 Ω
Figure 47. PG Response to SNS Falling with Auto-Restart (tDEGLITCH and tRESTART)
TPS22954 TPS22953 SC_018tek078.png
VIN = 5 V VBIAS = 5 V CT = 1000 pF
CIN = 1 µF CL = 100 µF RL = None
Figure 49. Quick Output Discharge of 100-µF Load (tDIS)