SLVS728D January   2007  – October 2019 TPS2412 , TPS2413

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Typical Application Diagram
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Dissipation Ratings
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Definitions
      2. 8.3.2 TPS2412 vs TPS2413 – MOSFET Control Methods
      3. 8.3.3 N+1 Power Supply – Typical Connection
      4. 8.3.4 Input ORing – Typical Connection
      5. 8.3.5 System Design and Behavior With Transients
      6. 8.3.6 TPS2412 Regulation-Loop Stability
      7. 8.3.7 MOSFET Selection and R(RSET)
      8. 8.3.8 Gate Drive, Charge Pump and C(BYP)
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Recommended Operating Range
    2. 10.2 VDD, BYP, and Powering Options
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • PW|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

TPS2412 vs TPS2413 – MOSFET Control Methods

The TPS2412 control method yields several benefits. First, the low-current GATE driver provides a gentle turnon and turnoff for slowly rising and falling input voltage. Second, it reduces the tendency for on/off cycling of a comparator based solution at light loads. Third, it avoids reverse currents if the fast turnoff threshold is left positive. The drawback to this method is that the MOSFET appears to have a high resistance at light load when the regulation is active. A momentary output voltage droop occurs when a large step load is applied from a light-load condition. The TPS2412 is a better solution for a mid-rail bus that is re-regulated.

The TPS2413 turns the MOSFET on if V(AC) is greater than 10 mV, and the rapid turnoff is activated at the programmed negative threshold. There is no linear control range and slow turnoff. The disadvantage is that the turnoff threshold must be negative (unless a minimum load is always present) permitting a continuous reverse current. Under a dynamic reverse voltage fault, the lower threshold voltage may permit a higher peak reverse current. There are a number of advantages to this control method. Step loads from a light load condition are handled without a voltage droop beyond I × R. If the redundant converter fails, applications with redundant synchronous converters may permit a small amount of reverse current at light load to assure that the MOSFET is all ready on. The TPS2413 is a better solution for low-voltage buses that are not re-regulated, and that may see large load steps transients.

These applications recommendations are meant as a starting point, with the needs of specific implementations overriding them.