SLVS324C July   2001  – October 2020 TPS60400 , TPS60401 , TPS60402 , TPS60403

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge-Pump Output Resistance
      2. 8.3.2 Efficiency Considerations
    4. 8.4 Device Functional Modes
      1. 8.4.1 Active-Schottky Diode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Voltage Inverter
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Capacitor Selection
          2. 9.2.1.2.2 Input Capacitor (CI)
          3. 9.2.1.2.3 Flying Capacitor (C(fly))
          4. 9.2.1.2.4 Output Capacitor (CO)
          5. 9.2.1.2.5 Power Dissipation
        3. 9.2.1.3 Application Curves
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
      2. 12.1.2 Device Family Products
    2. 12.2 Related Links
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBV|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information
9.2.1.2.5 Power Dissipation

As given in Section 7.4, the thermal resistance of TPS6040x is: RΘJA = 221°C/W.

The terminal resistance can be calculated using the following equation:

Equation 7. GUID-6B1D80DF-FF56-4AF1-9FCD-1424868DB579-low.gif

where:

TJ is the junction temperature. TA is the ambient temperature. PD is the power that is dissipated by the device.

Equation 8. GUID-F39EDC55-658A-46A8-9100-0861E3DEF24F-low.gif

The maximum power dissipation can be calculated using the following equation:

Equation 9. PD = VI× II - VO× IO = VI(max)× (IO + I(SUPPLY)) - VO× IO

The maximum power dissipation happens with maximum input voltage and maximum output current.

At maximum load the supply current is 0.7 mA maximum.

Equation 10. PD = 5 V × (60 mA + 0.7 mA) - 4.4 V × 60 mA = 40 mW

With this maximum rating and the thermal resistance of the device on the EVM, the maximum temperature rise above ambient temperature can be calculated using the following equation:

Equation 11. ΔTJ = RΘJA× PD = 221°C/W × 40 mW =8.8°C

This means that the internal dissipation increases TJ by <10°C.

The junction temperature of the device shall not exceed 125°C.

This means the IC can easily be used at ambient temperatures up to:

Equation 12. TA = TJ(max) -Δ TJ = 125°C/W - 10°C = 115°C