SLVSBQ2D January   2013  – May 2016 TPS61163

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 EasyScale Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Boost Converter
      2. 8.3.2  IFBX Pin Unused
      3. 8.3.3  Enable and Start-up
      4. 8.3.4  Soft Start
      5. 8.3.5  Full-Scale Current Program
      6. 8.3.6  Brightness Control
      7. 8.3.7  Undervoltage Lockout
      8. 8.3.8  Overvoltage Protection
      9. 8.3.9  Overcurrent Protection
      10. 8.3.10 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 One-Wire Digital Interface (Easyscale Interface)
      2. 8.4.2 PWM Control Interface
    5. 8.5 Programming
      1. 8.5.1 Easyscale Programming
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection
        2. 9.2.2.2 Compensation Capacitor Selection
        3. 9.2.2.3 Output Capacitor Selection
        4. 9.2.2.4 Schottky Diode Selection
      3. 9.2.3 Application Curves
    3. 9.3 Additional Application Circuits
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage(2) VIN, EN, PWM, IFB1, IFB2 –0.3 7 V
COMP, ISET –0.3 3
SW –0.3 40
PD Continuous power dissipation See Thermal Information
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
Machine model (MM) 200 (max)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Input voltage 2.7 6.5 V
VOUT Output voltage VIN 38 V
L Inductor 4.7 10 µH
CI Input capacitor 1 µF
CO Output capacitor 1 2.2 µF
CCOMP Compensation capacitor 330 nF
FPWM PWM dimming signal frequency 10 100 kHz
TA Operating ambient temperature –40 85 °C
TJ Operating junction temperature –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TPS61163 UNIT
YFF (DSBGA)
9 PINS
RθJA Junction-to-ambient thermal resistance 107 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 0.9 °C/W
RθJB Junction-to-board thermal resistance 18.1 °C/W
ψJT Junction-to-top characterization parameter 40 °C/W
ψJB Junction-to-board characterization parameter 18 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

VIN = 3.6 V, EN = high, PWM = high, IFB current = 20 mA, typical values are at TA = 25°C, and minimum and maximum values are at TA = –40°C to +85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY
VIN Input voltage range 2.7 6.5 V
VVIN_UVLO Undervoltage lockout threshold VIN falling 2.2 2.3 V
VIN rising 2.45
VVIN_HYS VIN UVLO hysteresis 100 mV
IQ Operating quiescent current into VIN Device enable, switching 1.2 MHz and no load
VIN = 3.6 V		 1.2 2 mA
ISD Shutdown current EN = low 1 2 µA
EN and PWM
VH EN Logic high 1.2 V
VL EN Logic Low 0.4 V
VH PWM logic high 1.2 V
VL PWM logic low 0.4 V
RPD EN pin and PWM pin internal pulldown resistor 400 800 1600 kΩ
tPWM_SD PWM logic low width to shutdown PWM high to low 20 ms
tEN_SD EN logic low width to shutdown EN high to low 2.5 ms
CURRENT REGULATION
VISET_full ISET pin voltage Full brightness 1.204 1.229 1.253 V
KISET_full Current multiplier Full brightness 1030
IFB_avg Current accuracy IISET = 20 μA, D = 100%, 0°C to 70°C –2% 2%
IISET = 20 µA, D = 100%, –40°C to 85°C –2.3% 2.3%
KM (IMAX – IAVG) / IAVG D = 100% 1% 2%
D = 25% 1%
IIFB_max Current sink max output current IISET = 35 μA, each IFBx pin 30 mA
POWER SWITCH
RDS(on) Switch MOSFET on resistance VIN = 3.6 V 0.25 Ω
VIN = 3 V 0.3
ILEAK_SW Switch MOSFET leakage current VSW = 35 V, TA = 25°C 1 µA
OSCILLATOR
fSW Oscillator frequency 1000 1200 1500 kHz
Dmax Maximum duty cycle Measured on the drive signal of switch MOSFET 91% 95%
BOOST VOLTAGE CONTROL
VIFB_reg IFBx feedback regulation voltage IIFBx = 20 mA, measured on IFBx pin which has a lower voltage 90 mV
Isink COMP pin sink current 12 µA
Isource COMP pin source current 5 µA
Gea Error amplifier transconductance 30 55 80 µmho
Rea Error amplifier output resistance 45.5 MΩ
fea Error amplifier crossover frequency 5 pF connected to COMP pin 1.65 MHz
PROTECTION
ILIM Switch MOSFET current limit D = Dmax, 0°C to 70°C 1 1.5 2 A
ILIM_Start Switch MOSFET start up current limit D = Dmax 0.7 A
tHalf_LIM Time window for half current limit 5 ms
VOVP_SW SW pin over voltage threshold 36 37.5 39 V
VOVP_IFB IFBx pin over voltage threshold Measured on IFBx pin 4.2 4.5 4.8 V
VACKNL Acknowledge output voltage low
Open drain, Rpullup = 15 kΩ to VIN(1)		 0.4 V
THERMAL SHUTDOWN
Tshutdown Thermal shutdown threshold 160 °C
Thys Thermal shutdown hysteresis 15 °C
(1) Acknowledge condition active 0, this condition is only applied when the RFA bit is set to 1. To use this feature, master must have an open drain output, and the data line must be pulled up by the master with a resistor load.

7.6 EasyScale Timing Requirements

MIN NOM MAX UNIT
tes_delay EasyScale detection delay, measured from EN low to high 100 µs
tes_det EasyScale detection time, EN pin low time 260 µs
tes_win EasyScale detection window, easured from EN low to high(1) 1 ms
tstart Start time of program stream 2 µs
tEOS End time of program stream 2 360 µs
tH_LB High time of low bit (Logic 0) 2 180 µs
tL_LB Low time of low bit (Logic 0) 2 × tH_LB 360 µs
tH_HB High time of high bit (Logic 1) 2 × tL_HB 360 µs
tL_HB Low time high bit (Logic 1) 2 180 µs
tvalACKN Acknowledge valid time 2 µs
tACKN Duration of acknowledge condition 512 µs
(1) To select EasyScale interface, after tes_delay delay from EN low to high, drive EN pin to low for more than tes_det before tes_win expires.

7.7 Typical Characteristics

TPS61163 C007_SLVSBQ2.png
Figure 1. Dimming Linearity
TPS61163 wave4_lvsbq2.gif
Figure 3. Start-Up Waveform
TPS61163 wave6_lvsbq2.gif
Figure 5. Shutdown Waveform
TPS61163 wave3_lvsbq2.gif
Figure 2. Start-Up Waveform
TPS61163 wave5_lvsbq2.gif
Figure 4. Shutdown Waveform