SNVSA76B March 2015 – March 2017 TPS61177A
PRODUCTION DATA.
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Voltage(2) | VINB | –0.3 | 26.4 | V |
| LXB, VLED, CS1, CS2, CS3, CS4, CS5, CS6 | –0.3 | 40 | ||
| ENB, PWMB | –0.3 | 30 | ||
| SDA, SCL, VCC | –0.3 | 3.6 | ||
| Continuous power dissipation | See Thermal Information | °C | ||
| Operating junction temperature | –40 | 150 | ||
| Storage temperature, Tstg | –65 | 150 | ||
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 | |||
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIN | Input voltage | 2.5 | 24 | V |
| VOUT | Output voltage | VIN + 2 | 39 | |
| FPWM_I | PWM input signal frequency | 0.1 | 25 | kHz |
| DMIN_I | PWM input signal minimum duty cycle | 1% | ||
| FBOOST | Boost regulator switching frequency | 450 | 1200 | kHz |
| TA | Operating free-air temperature | –40 | 85 | °C |
| TJ | Operating junction temperature | –40 | 125 | |
| THERMAL METRIC(1) | TPS61177A | UNIT | |
|---|---|---|---|
| RGR (VQFN) | |||
| 20 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 34.4 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 46.8 | °C/W |
| RθJB | Junction-to-board thermal resistance | 12.2 | °C/W |
| ψJT | Junction-to-top characterization parameter | 0.5 | °C/W |
| ψJB | Junction-to-board characterization parameter | 12.3 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 1.0 | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| VINB | Input voltage range | 2.5 | 24 | V | ||
| Iq_VINB | Operating quiescent current into VIN | Device enable, no switching and no load, VINB = 12 V |
3.5 | mA | ||
| ISD | Shutdown current | VINB = 12 V, EN = low | 10 | µA | ||
| VINB = 24 V, EN = low | 15 | |||||
| VINB_UVLO | VINB undervoltage lockout threshold, voltage ramp up |
UVLO = 000 | 2.1 | 2.25 | 2.4 | V |
| UVLO = 001 | 2.4 | 2.55 | 2.7 | |||
| UVLO = 010 | 2.8 | 3 | 3.2 | |||
| UVLO = 011 | 3.3 | 3.5 | 3.7 | |||
| Other case | 3.8 | 4 | 4.2 | |||
| VIN_Hys | VIN undervoltage lockout hysteresis | 200 | mV | |||
| BOOST OUTPUT REGULATION | ||||||
| VCS | CS voltage regulation | 500 | 600 | mV | ||
| RDS(ON) | Switch FET on-resistance | VIN = 12 V | 0.20 | 0.35 | Ω | |
| VIN = 3.3 V | 0.30 | 0.40 | ||||
| ILIM | Switching MOSFET current limit | D = Dmax | 1.8 | 2.2 | 2.6 | A |
| ILEAK_LX | Switch FET leakage current | VSW = 40 V | 5 | µA | ||
| FLX | Switching frequency | FREQ = 00 | 0.36 | 0.45 | 0.54 | MHz |
| FREQ = 01 | 0.48 | 0.6 | 0.72 | |||
| FREQ = 10 | 0.64 | 0.8 | 0.96 | |||
| FREQ = 11 | 0.96 | 1.2 | 1.44 | |||
| DMAX | Maximum duty cycle | FLX = 0.8 MHz | 90% | 95% | ||
| TF | Slew rate of switching FET ON | SR = 00 | 4.6 | V/ns | ||
| SR = 01 | 3.5 | |||||
| SR = 10 | 2.5 | |||||
| SR = 11 | 1.3 | |||||
| CS CURRENT REGULATION | ||||||
| ICS | CSn current (See Figure 23) |
ICS = 0000 | 15 | mA | ||
| ICS = 0001 | 16 | |||||
| … | … | |||||
| ICS = 1111 | 30 | |||||
| ICSA | CSn current accuracy (ICSn – 20 mA × DPWM_I)/20 mA x DPWM_I |
ICS = 20 mA, MODE = 00 and 01 DPWM_I = 100%, TA = 25°C |
–3% | 3% | ||
| ICS = 20 mA, MODE = 01 DPWM_I = 255/1023, TA = 25°C |
–3% | 3% | ||||
| ICS = 20 mA, MODE = 10, DPWM_I = 255/1023, TA = 25°C |
–3% | 3% | ||||
| ICS = 20 mA, MODE = 10, DPWM_I = 51/1023, TA = 25°C |
–5% | 5% | ||||
| ICS = 20 mA, MODE = 10, DPWM_I = 10/1023, TA = 25°C |
–8% | 8% | ||||
| ICSM | Current matching (ICSn – IAVG)/IAVG | ICS = 20 mA, MODE = 00 and 01, DPWM_I = 100%, TA = 25°C |
–2% | 2% | ||
| ICS = 20 mA, MODE = 01, DPWM_I = 255/1023, TA = 25°C |
–2% | 2% | ||||
| ICS = 20 mA, MODE = 10, DPWM_I = 255/1023, TA = 25°C |
–2% | 2% | ||||
| ICS = 20 mA, MODE = 10, DPWM_I = 51/1023, TA = 25°C |
–5% | -5% | ||||
| ICS = 20 mA, MODE = 10, DPWM_I = 10/1023, TA = 25°C |
–5% | 5% | ||||
| DC dimming resolution steps | MODE = 01 and 10, FPWM_I = 0.1 to 5 kHz | 1024 | ||||
| MODE = 01 and 10, FPWM_I = 5 to 10 kHz | 512 | |||||
| MODE = 01 and 10, FPWM_I = 10 to 25 kHz | 256 | |||||
| Brightness response time | DPWM_I 10% to 90% MODE = mixed and DC, FPWM_I = 25 kHz |
400 | μs | |||
| DPWM_I 10% to 90% MODE = mixed and DC, FPWM_I = 100 Hz |
10.4 | ms | ||||
| ICSLK | CSn leakage current | VCS = 40 V | 5 | μA | ||
| ICSIR | CSn current inrush | 10% | ||||
| tMP | Minimum dimming pulse | MODE = 00 | 400 | ns | ||
| tDEG | Deglitch pulse width | 125 | ns | |||
| CONTROL AND PROTECTION | ||||||
| VH | ENB logic high threshold | VINB = 2.7 V and 3.3 V | 1.8 | V | ||
| VL | ENB logic low threshold | VINB = 2.7 V and 3.3 V | 0.5 | |||
| VH | PWMB logic high threshold | VINB = 2.7 V and 3.3 V | 1.8 | |||
| VL | PWMB logic low threshold | VINB = 2.7 V and 3.3 V | 0.5 | |||
| RPD | Pulldown resistor on ENB | ENB = 3.3 V | 300 | 600 | 1200 | kΩ |
| Pulldown resistor on PWMB | PWMB = 3.3 V | 300 | 600 | 1200 | ||
| VOVP | Output overvoltage threshold | 39 | 39.5 | 40 | V | |
| Tshutdown | Thermal shutdown threshold | 150 | °C | |||
| Thermal shutdown hysteresis | 15 | |||||
| FSAMPLE | Input sampling oscillator frequency | 22 | 25 | 29 | MHz | |
| MIN | NOM | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| ADDR | Configuration parameters slave address | Write | 58h | |||
| Read | 59h | |||||
| VIL | Low level input voltage | Supply = 2.5 V, VIN falling, standard and fast modes |
0.75 | V | ||
| VIH | High level input voltage | Supply = 2.5 V, VIN rising, standard and fast modes |
1.75 | V | ||
| VHYS | Hysteresis | Supply = 2.5 V, applicable to fast mode only |
125 | mV | ||
| VOL | Low level output voltage | Sinking 3 mA | 500 | mV | ||
| CI | Input capacitance | 10 | pF | |||
| ƒSCL | Clock frequency | Standard mode | 100 | kHz | ||
| Fast mode | 400 | |||||
| tLOW | Clock low period | Standard mode | 4.7 | µs | ||
| Fast mode | 1.3 | |||||
| tHIGH | Clock high period | Standard mode | 4 | µs | ||
| Fast mode | 0.6 | |||||
| tBUF | Bus free time between a STOP and a START condition | Standard mode | 4.7 | µs | ||
| Fast mode | 1.3 | |||||
| thd:STA | Hold time for a repeated START condition | Standard mode | 4 | µs | ||
| Fast mode | 0.6 | |||||
| tsu:STA | Set-up time for a repeated START condition | Standard mode | 4 | µs | ||
| Fast mode | 0.6 | |||||
| tsu:DAT | Data set-up time | Standard mode | 250 | ns | ||
| Fast mode | 100 | |||||
| thd:DAT | Data hold time | Standard mode | 0.05 | 3.45 | µs | |
| Fast mode | 0.05 | 0.9 | ||||
| tRCL1 | Rise time of SCL after a repeated START condition and after an ACK bit | Standard mode | 20+0.1CB | 1000 | ns | |
| Fast mode | 20+0.1CB | 1000 | ||||
| tRCL | Rise time of SCL | Standard mode | 20+0.1CB | 1000 | ns | |
| Fast mode | 20+0.1CB | 300 | ||||
| tFCL | Fall time of SCL | Standard mode | 20+0.1CB | 300 | ns | |
| Fast mode | 20+0.1CB | 300 | ||||
| tRDA | Rise time of SDA | Standard mode | 20+0.1CB | 1000 | ns | |
| Fast mode | 20+0.1CB | 300 | ||||
| tFDA | Fall time of SDA | Standard mode | 20+0.1CB | 300 | ns | |
| Fast mode | 20+0.1CB | 300 | ||||
| tsu:STO | Set-up time for STOP condition | Standard mode | 4 | µs | ||
| Fast mode | 0.6 | |||||
| CB | Capacitive load on SDA and SCL | Standard mode | 400 | pF | ||
| Fast mode | 400 | |||||
| NWRITE | Number of write cycles | 1000 | ||||
| tWRITE | Write time | 100 | ms | |||
| Data retention | Storage temperature = 150°C | 100,000 | hrs | |||
| TITLE | DESCRIPTION | FIGURE |
|---|---|---|
| Efficiency vs PWM Duty in PWM Mode | VIN = 12 V, VOUT = 6S6P, 8S6P, 10S6P, ICS = 20 mA, L = 10 µH | Figure 1 |
| Efficiency vs PWM Duty in PWM Mode | VIN = 3 V, 12 V, 21 V, VOUT = 6S6P, 8S6P, 10S6P, L = 10 µH | Figure 2 |
| Efficiency vs PWM duty in Mixed Mode | VIN = 12 V, VOUT = 6S6P, 8S6P, 10S6P, ICS = 20 mA, L = 10 µH | Figure 3 |
| Efficiency vs PWM duty in Mixed Mode | VIN = 3 V, 12 V, 21 V, VOUT = 6S6P, 8S6P, 10S6P, L = 10 µH | Figure 4 |
| Efficiency vs PWM duty in Analog Mode | VIN = 12 V, VOUT = 6S6P, 8S6P, 10S6P, ICS = 20 mA, L = 10 µH | Figure 5 |
| Efficiency vs PWM duty in Analog Mode | VIN = 3 V, 12 V, 21 V, VOUT = 6S6P, 8S6P, 10S6P, L = 10 µH | Figure 6 |
| Dimming Linearity in PWM Mode | VIN = 12 V, VOUT = 10S6P , FDIM = 200 Hz and 20 kHz, L = 10 µH | Figure 7 |
| Dimming Linearity in Mixed Mode | VIN = 12 V, VOUT = 10S6P , FDIM = 200 Hz and 20 kHz, L = 10 µH | Figure 8 |
| Dimming linearity in Analog Mode | VIN = 12 V, VOUT = 10S6P , FDIM = 200 Hz and 20 kHz, L = 10 µH | Figure 9 |
| Switch Waveform | VIN = 3 V, VOUT = 6S6P, Duty = 100%, L = 10 µH | Figure 10 |
| Switch Waveform | VIN = 12 V, VOUT = 10S6P, Duty = 100%, L = 10 µH | Figure 11 |
| Mixed-Mode Dimming Ripple | VIN = 12 V, VOUT = 10S6P, FDIM = 200 Hz, Duty = 50%, L = 10 µH | Figure 12 |
| Mixed-Mode Dimming Ripple | VIN = 12 V, VOUT = 10S6P, FDIM = 200 Hz, Duty = 12.5%, L = 10 µH | Figure 13 |
| Mixed-Mode Dimming Ripple | VIN = 12 V, VOUT = 10S6P, FDIM = 20 kHz, Duty = 12.5%, L = 10 µH | Figure 14 |
| PWM-Mode Dimming Ripple | VIN = 12 V, VOUT = 10S6P, FDIM = 200 Hz, Duty = 50%, L = 10 µH | Figure 15 |
| PWM-Mode Dimming Ripple | VIN = 12 V, VOUT = 10S6P, FDIM = 20 kHz, Duty = 50%, L = 10 µH | Figure 16 |
| FDIM = 200 Hz | Duty = 12.5% | |
| FDIM = 200 Hz | Duty = 50% | |
| FDIM = 200 Hz | Duty = 50% | |
| FDIM = 20 kHz | Duty = 12.5% | |
| FDIM = 20 kHz | Duty = 50% | |