SBVS133A February   2010  – November 2014 TPS783

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Internal Current Limit
      2. 7.3.2 Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Input and Output Capacitor Requirements
        2. 8.2.1.2 Dropout Voltage
        3. 8.2.1.3 Transient Response
        4. 8.2.1.4 Minimum Load
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 System Examples
      1. 8.3.1 Extending Battery Life in Keep-Alive Circuitry Applications for MSP430 and Other Low-Power Microcontrollers
      2. 8.3.2 Supercapacitor-Based Backup Power
    4. 8.4 Do's and Don’ts
  9. 9 Power-Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Board Layout Recommendations to Improve PSRR and Noise Performance
      2. 10.1.2 Package Mounting
      3. 10.1.3 Thermal Information
        1. 10.1.3.1 Thermal Protection
        2. 10.1.3.2 Power Dissipation
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Evaluation Modules
        2. 11.1.1.2 Spice Models
      2. 11.1.2 Device Nomenclature
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

At TJ = –40°C to 105°C (unless otherwise noted). All voltages are with respect to GND.(1)
MIN MAX UNIT
Voltage VIN –0.3 6.0 V
EN pin –0.3 VIN + 0.3 V
VOUT –0.3 VIN + 0.3 V
Current IOUT Internally limited A
Output short-circuit duration Indefinite
Temperature Operating junction, TJ –40 160 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –55 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) –2000 2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) –500 500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Input voltage 2.2 5.5 V
VOUT Output voltage 1.8 4.2 V
VEN Enable voltage 0 VIN V
IOUT Output current 0 150 mA
TJ Junction temperature –40 105 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS783xx UNIT
DDC (SOT)
5 PINS
RθJA Junction-to-ambient thermal resistance 193.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 40.0
RθJB Junction-to-board thermal resistance 34.3
ψJT Junction-to-top characterization parameter 0.9
ψJB Junction-to-board characterization parameter 34.1
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

At TJ = –40°C to 105°C, VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater; IOUT = 100 μA, VEN = VIN, COUT = 1.0 μF,
and fixed VOUT test conditions (unless otherwise noted). Typical values at TJ = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Input voltage range 2.2 5.5 V
VOUT DC output accuracy Nominal TJ = 25°C –2% 2%
Over VIN, IOUT, temperature VOUT + 0.5 V ≤ VIN ≤ 5.5 V,
100 μA ≤ IOUT ≤ 150 mA		 –3.0% ±2.0% 3.0%
ΔVO(ΔVI) Line regulation VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V ±1.0%
ΔVO(ΔIO) Load regulation 100 μA ≤ IOUT ≤ 150 mA ±1.0%
VDO Dropout voltage(1) VIN = 95% VOUT(nom), IOUT = 150 mA 130 250 mV
ILIM Output current limit VOUT = 0.90 × VOUT(nom) 150 230 400 mA
IGND GND pin current IOUT = 0 mA 420 800 nA
IOUT = 150 mA 8 μA
IEN EN pin current VIN = VEN = 5.5 V 0.07 40 nA
ISHDN(GND) Shutdown current at GND pin VEN ≤ 0.4 V, VIN(min) ≤ VIN < 5.5 V(2) 18 150 nA
ISHDN(OUT) Shutdown current at OUT pin (leakage)(4) VIN = open, VEN = 0.4 V,
VOUT = VOUT(nom)		 137 500 nA
VEN(HI) Enable high-level voltage VIN = 5.5 V 1.2 VIN V
VEN(LO) Enable low-level voltage VIN = 5.5 V 0 0.4 V
PSRR Power-supply rejection ratio VIN = 4.3 V,
VOUT = 3.0 V,
IOUT = 150 mA		 f = 10 Hz 40 dB
f = 100 Hz 20 dB
f = 1 kHz 15 dB
Vn Output noise voltage BW = 100 Hz to 100 kHz, VIN = 2.2 V,
VOUT = 1.2 V, IOUT = 1 mA		 86 μVRMS
tSTR Startup time(3) COUT = 1.0 μF, VOUT = 10% VOUT(nom) to
VOUT = 90% VOUT(nom)		 500 μs
Tsd Thermal shutdown temperature Shutdown, temperature increasing 160 °C
Reset, temperature decreasing 140 °C
TJ Operating junction temperature –40 125 °C
(1) VDO is not measured for devices with VOUT(nom) ≤ 2.3 V because minimum VIN = 2.2 V.
(2) VIN(min) = (VOUT(nom) + 0.5 V) or 2.2 V, whichever is greater.
(3) Time from VEN = 1.2 V to VOUT = 90% (VOUT(nom)).
(4) See Shutdown in the Application and Implementation section for more details.

6.6 Typical Characteristics

At TJ = –40°C to 105°C, VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater; IOUT = 100 μA, VEN = VIN, COUT = 1 μF, and     CIN = 1 μF (unless otherwise noted).
tc_line_reg_5mA_bvs133.gif
IOUT = 5 mA, VOUT(nom) = 3.0 V
Figure 1. TPS78330 Line Regulation
tc_load_reg_3p5mA_bvs133.gif
VIN = 3.5 V, VOUT(nom) = 3.0 V
Figure 3. TPS78330 Load Regulation
tc_vdo_tj_bvs133.gif
VOUT(nom) = 3.0 V, VIN = 0.95 × VOUT(nom)
Figure 5. TPS78330 Dropout Voltage vs
Junction Temperature
tc_ilimit_vin_95pct_bvs133.gif
VOUT = 95% VOUT(nom), VOUT(nom) = 3.0 V
Figure 7. TPS78330 Current Limit vs Input Voltage
tc_en_hysteresis_tj_bvs133.gif
IOUT = 1 mA, VOUT(nom) = 3.0 V
Figure 9. TPS78330 Enable Pin Hysteresis vs
Junction Temperature
tc_osnd_bvs133.gif
CIN = 1 μF, COUT = 2.2 μF, VIN = 3.5 V, VOUT(nom) = 3.0 V
Figure 11. TPS78330 Output Spectral Noise Density
tc_rip_rej_fqcy_bvs133.gif
VIN = 3.5 V, VOUT(nom) = 3.0 V, COUT = 2.2 μF
Figure 13. TPS78330 Ripple Rejection vs Frequency
tc_vout-enable_slow_bvs133.gif
Figure 15. TPS78330 Output Voltage vs Enable (Slow Ramp)
tc_load_res_10ma_bvs133.gif
Figure 17. TPS78330 Load Transient Response
tc_line_reg_150mA_bvs133.gif
IOUT = 150 mA, VOUT(nom) = 3.0 V
Figure 2. TPS78330 Line Regulation
tc_vdo_io_bvs133.gif
VOUT(nom) = 3.0 V, VIN = 0.95 × VOUT(nom)
Figure 4. TPS78330 Dropout Voltage vs Output Current
tc_ignd_pin_current_bvs133.gif
IOUT = 0 mA, VOUT(nom) = 3.0 V
Figure 6. TPS78330 Ground Pin Current vs Input Voltage
tc_i_enpin_vin_bvs133.gif
IOUT = 100 μA, VOUT(nom) = 3.0 V
Figure 8. TPS78330 Enable Pin Current vs Input Voltage
tc_iout_lkg_shutdown_bvs133.gif
VOUT = VOUT(nom) = 3.0 V, VEN = 0.4 V
Figure 10. TPS78330 Output Current Leakage at Shutdown
tc_dvout_tj_bvs133.gif
VIN = 3.5 V, VOUT(nom) = 3.0 V
Figure 12. TPS78330 %ΔVO vs Junction Temperature
tc_vin_ramp-vout_bvs133.gif
Figure 14. TPS78330 Input Voltage Ramp vs Output Voltage
tc_scope_bvs133.gif
Figure 16. TPS78330 Input Voltage vs Delay to Output