SLIS178B October 2017 – January 2018 TPS92830-Q1
The TPS92830-Q1 device uses IN voltage to generate device bias. A two-stage charge pump provides gate driving voltage above the IN voltage for the high-side N-channel MOSFET. Each channel current is independently set by sense resistors. The analog-dimming ICTRL input supports off-board resistors as bin-setting resistors as well as direct voltage input. An integrated precision PWM generator could be used for PWM dimming locally.