SCDS203B DECEMBER   2005  – March 2019 TS5A63157

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Minimum and Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics for 5-V Supply
    6. 6.6 Electrical Characteristics for 3.3-V Supply
    7. 6.7 Electrical Characteristics for 2.5-V Supply
    8. 6.8 Electrical Characteristics for 1.8-V Supply
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated Overshoot and Undershoot Protection Circuitry
      2. 8.3.2 Isolation in Powered-Off Mode, V+ = 0 V
      3. 8.3.3 Break-before-make
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Parameter Measurement Information

Table 1. Parameter Description

SYMBOL DESCRIPTION
VCOM Voltage at COM
VNC Voltage at NC
VNO Voltage at NO
ron Resistance between COM and NC or COM and NO ports when the channel is ON
rpeak Peak on-state resistance over a specified voltage range
Δron Difference of ron between channels in a specific device
ron(flat) Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INC(OFF) Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state
INC(PWROFF) Leakage current measured at the NC port during the power-down condition, V+ = 0
INO(OFF) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
INO(PWROFF) Leakage current measured at the NO port during the power-down condition, V+ = 0
INC(ON) Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output (COM) open
INO(ON) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output (COM) open
ICOM(ON) Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state and the output (NC or NO) open
ICOM(PWROFF) Leakage current measured at the COM port during the power-down condition, V+ = 0
VIH Minimum input voltage for logic high for the control input (IN)
VIL Maximum input voltage for logic low for the control input (IN)
VI Voltage at the control input (IN)
IIH, IIL Leakage current measured at the control input (IN)
tON Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
tBBM Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
QC Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.Charge injection, QC = CL ×  ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNC(OFF) Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNO(OFF) Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNC(ON) Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(ON) Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON) Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
CI Capacitance of control input (IN)
OISO OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.
XTALK Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to NC). This is measured in a specific frequency and in dB.
BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher harmonics to the magnitude of fundamental harmonic.
I+ Static power-supply current with the control (IN) pin at V+ or GND
VOUTU Output voltage during an undershoot event. This is measured by turning off a specific channel and applying an undershoot voltage at the input of the switch.
VOUTO Output voltage during an overshoot event. This is measured by turning off a specific channel and applying an overshoot voltage at the input of the switch.
TS5A63157 pmi13-cds203.gifFigure 13. ON-State Resistance (ron)
TS5A63157 pmi14-cds203.gifFigure 14. OFF-State Leakage Current
(INC(OFF), INC(PWROFF), INO(OFF), INO(PWROFF), ICOM(OFF), ICOM(PWROFF))
TS5A63157 pmi15-cds203.gifFigure 15. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON))
TS5A63157 pmi16-cds203.gifFigure 16. Capacitance (CIN, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON))
TS5A63157 pmi17-cds203.gif
1. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
Figure 17. Turn-On (tON) and Turn-Off (tOFF) Time
TS5A63157 pmi18-cds203.gifFigure 18. Undershoot and Overshoot Test
TS5A63157 pmi19-cds203.gif
1. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
2. CL includes probe and jig capacitance.
Figure 19. Break-Before-Make (tBBM) Time
TS5A63157 pmi20-cds203.gifFigure 20. Bandwidth (BW)
TS5A63157 pmi21-cds203.gifFigure 21. OFF Isolation (OISO)
TS5A63157 pmi22-cds203.gifFigure 22. Crosstalk (XTALK)
TS5A63157 pmi23-cds203.gif
1. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
2. CL includes probe and jig capacitance.
Figure 23. Charge Injection (QC)
TS5A63157 pmi24-cds203.gif
1. CL includes probe and jig capacitance.
Figure 24. Total Harmonic Distortion (THD)