SLUSD60 Data sheet

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted), all voltageages are with respect to GND, currents are positive into and negative out of the specified terminal.⁽¹⁾

		MIN	MAX	UNIT
Input voltage	HV, HB	–0.3	640	V
	BLK, FB, LL/SS	–0.3	7	V
	VCR	–0.3	7	V
	HB - HS	–0.3	17	V
	VCC	–0.3	30	V
	BW, ISNS	–5	7	V
RVCC output voltage	DC	–0.3	17	V
HO output voltage	DC	HS – 0.3	HB + 0.3	V
HO output voltage	Transient, less than 100ns	HS – 2	HB + 0.3	V
LO output voltage	DC	–0.3	RVCC + 0.3	V
LO output voltage	Transient, less than 100ns	–2	RVCC + 0.3	V
Floating ground slew rate	dV_HS/dt	–50	50	V/ns
HO, LO pulsed current	I_{OUT_PULSED}	–0.6	1.2	A
Junction temperature range	T_J	–40	150	°C
Storage temperature range, T_stg	T_stg	–65	150
Lead temperature	Soldering, 10 second		300
Lead temperature	Reflow		260

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, high voltage pins⁽¹⁾	±1000	V
		Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all other pins⁽¹⁾	±2000
		Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	±500

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

All voltages are with respect to GND, –40°C < T_J = T_A< 125°C, currents are positive into and negative out of the specified terminal, unless otherwise noted.

		MIN	NOM	MAX	UNIT
HV, HS	Input voltage			600	V
V_CC	Supply voltage	13	15	26	V
HB - HS	Driver bootstrap voltage	10	12	16	V
C_B	Ceramic bypass capacitor from HB to HS	0.1		5	µF
C_RVCC	RVCC pin decoupling capacitor	4.7			µF
I_RVCCMAX	Maximum output current of RVCC ⁽¹⁾			100	mA
T_A	Operating ambient temperature	-40		125	°C

(1) Not production tested. Specified by characterization

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		UCC256304	UNIT
		D (SOIC)
		14 PINS
R_θJA	Junction-to-ambient thermal resistance	74.7	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	30.7	°C/W
R_θJB	Junction-to-board thermal resistance	31.8	°C/W
Ψ_JT	Junction-to-top characterization parameter	4.4	°C/W
Ψ_JB	Junction-to-board characterization parameter	31.4	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

All voltages are with respect to GND, –40°C < T_J = T_A < 125°C, VCC = 15 V, currents are positive into and negative out of the specified terminal, unless otherwise noted.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE
V_CCShort	Below this threshold, use reduced start up current		0.5	0.6	0.7	V
V_{CCReStartJfet}	Below this threshold, re-enable JFET.		10.2	10.5	10.8	V
V_CCStartSelf	In self bias mode, gate starts switching above this level		25	26	28	V
SUPPLY CURRENT
I_CCSleep	Current drawn from VCC rail during burst off period	V_CC = 15V	475	565	700	µA
I_CCRun	Current drawn from VCC Pin while gate is switching. Excluding Gate Current	V_CC = 15V, maximum dead time	1.75	2.2	2.65	mA
REGULATED SUPPLY
V_RVCC	Regulated supply voltage	V_CC = 15V	11.60	12	12.40	V
V_RVCC		V_CC = 13V	11.2	11.8	12.25	V
V_RVCCUVLO	RVCC under voltage lock out voltage ⁽¹⁾			7		V
HIGH VOLTAGE STARTUP
I_HVLow	Reduced startup pin current		0.28	0.41	0.54	mA
I_HVHigh	Full startup pin current		7.6	10.20	12.6	mA
I_HVLeak	HV current source leakage current		1.40	3.37	7.55	µA
I_HVZCD	Highest AC zero crossing detection test current		0.63	0.77	0.89	mA
I_{XCAPDischarge}	X-cap discharge current		9.6	11.47	13.5	mA
t_XCAPZCD	AC zero crossing detection window length for first three test current stage ⁽¹⁾		10	11.85	14	ms
t_XCAPZCDLast	AC zero crossing detection window length for final test current stage ⁽¹⁾		43	46	52	ms
t_XCAPIdle	AC zero crossing detection idle period length ⁽¹⁾		635	704	772	ms
t_{XCAPDischarge}	Time for X-cap discharge current active ⁽¹⁾		327	358	390	ms
BULK VOLTAGE SENSE
V_BLKStart	Input voltage that allows LLC to start switching	Voltage rising	1.01	1.04	1.08	V
V_BLKStop	Input voltage that forces LLC operation to stop	Voltage falling	0.83	0.87	0.93	V
V_BLKOVRise	Input voltage that causes switching to stop	Voltage rising	4.92	5.03	5.12	V
V_BLKOVFall	Input voltage that causes switching to re-start	Voltage falling	3.67	3.76	3.86	V
FEEDBACK PIN
R_FBInternal	Internal pull down resistor value		90.7	101.5	112.3	kΩ
I_FB	FB internal current source		76.5	85.1	93.6	µA
f_-3dB	Feedback chain -3dB cut off frequency ⁽²⁾		1			MHz
RESONANT CURRENT SENSE
V_{ISNS_OCP1}	OCP1 threshold		3.97	4.03	4.07	V
V_{ISNS_OCP1_SS}	OCP1 threshold during soft start ⁽¹⁾			5		V
V_{ISNS_OCP2}	OCP2 threshold		0.68	0.84	0.99	V
V_{ISNS_OCP3}	OCP3 threshold		0.49	0.64	0.79	V
T_{ISNS_OCP2}	The time the average input current needs to stay above OCP2 threshold before OCP2 is triggered ⁽¹⁾			2		ms
T_{ISNS_OCP3}	The time the average input current needs to stay above OCP3 threshold before OCP3 is triggered ⁽¹⁾			50		ms
V_{IpolarityHyst}	Resonant current polarity detection hysteresis		16.9	30.7	44.7	mV
n_OCP1	Number of OCP1 cycles before OCP1 fault is tripped ⁽¹⁾			4
RESONANT CAPACITOR VOLTAGE SENSE
V_CM	Internal common mode voltage		2.91	3.02	3.14	V
I_RAMP	Frequency compensation ramp current source value		1.63	1.84	2.10	mA
I_Mismatch	Pull up and pull down ramp current source mismatch ⁽³⁾		-1.25		1.25	%
SOFT START
I_SSUp	Current output from SS pin to charge up the soft start capacitor		21.8	25.8	29.8	µA
R_SSDown	SS pin pull down resistance	ZCS or OCP1	222	401	580	Ω
GATE DRIVER
V_LOL	LO output low voltage	I_sink = 20 mA	0.027	0.052	0.087	V
V_RVCC- V_LOH	LO output high voltage	I_source = 20 mA	0.113	0.178	0.263	V
V_HOL - V_HS	HO output low voltage	I_sink = 20 mA	0.027	0.053	0.087	V
V_HB- V_HOH	HO output high voltage	I_source = 20 mA	0.113	0.173	0.263	V
V_{HB-HSUVLORise}	High side gate driver UVLO rise threshold		7.35	7.94	8.70	V
V_{HB-HSUVLOFall}	High side gate driver UVLO fall threshold		6.65	7.25	7.76	V
I_{source_pk}	HO, LO peak source current ⁽²⁾			-0.6		A
I_{sink_pk}	HO, LO peak sink current ⁽²⁾			1.2		A
BOOTSTRAP
I_{BOOT_QUIESCENT}	(HB - HS) quiescent current	HB - HS = 12 V	51.10	74.40	97.70	µA
I_{BOOT_LEAK}	HB to GND leakage current		0.02	0.40	5.40	µA
t_ChargeBoot	Length of charge boot state		234	267	296	µs
BIAS WINDING
V_BWOVRise	Output voltage OVP		-4.1	-3.97	-3.86	V
BURST MODE
R_LL	LL voltage scaling resistor value		240	250	258	kΩ
ADAPTIVE DEADTIME
dV_HS/dt	Detectable PSN slew rate ⁽¹⁾		±1		±50	V/ns
FAULT RECOVERY
t_PauseTimeOut	Paused timer ⁽¹⁾			1		s
THERMAL SHUTDOWN
T_{J_r}	Thermal shutdown temperature ⁽¹⁾	Temperature rising	125	145		°C
T_{J_H}	Thermal shutdown hsyterisis ⁽¹⁾			20		°C

(1) Not production tested. Specified by characterization.

(2) NNot production tested. Specified by design.

(3) I_Mismatch calculated as average of (I_PD-(I_PD+I_PU)/(I_PD+I_PU)/2)) and (I_PU-(I_PD+I_PU)/((I_PD+I_PU)/2)

6.6 Switching Characteristics

All voltages are with respect to GND, –40°C < T_J = T_A < 125°C, VCC = 12 V, currents are positive into and negative out of the specified terminal, unless otherwise noted.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
t_r(LO)	Rise time	10% to 90%, 1-nF load	18	35	50	ns
t_f(LO)	Fall time	10% to 90%, 1-nF load	15	25	50	ns
t_r(HO)	Rise time	10% to 90%, 1-nF load	18	35	50	ns
t_f(HO)	Fall time	10% to 90%, 1-nF load	15	25	50	ns
t_DT(min)	Minimum dead time ⁽¹⁾			100		ns
t_DT(max)	Maximum dead time (dead time fault) ⁽¹⁾			150		µs
t_ON(min)	Minimum gate on time ⁽¹⁾			250		ns
t_ON(max)	Maximum gate on time ⁽¹⁾			14.5		µs