SLPS537 March   2015 CSD13306W

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD13306W Package Dimensions
    2. 7.2 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZC|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra Low on Resistance
  • Low Qg and Qgd
  • Small Footprint 1 × 1.5 mm
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free

2 Applications

  • Battery Management
  • Load Switch
  • Battery Protection

3 Description

This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1.5 mm outline with excellent thermal characteristics and an ultra low profile.

Top View
CSD13306W Pin_Map.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 12 V
Qg Gate Charge Total (4.5 V) 8.6 nC
Qgd Gate Charge Gate-to-Drain 3.0 nC
RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V 12.9
VGS = 4.5 V 8.8
VGS(th) Voltage Threshold 1.0 V

Ordering Information(1)

Device Qty Media Package Ship
CSD13306W 3000 7-Inch Reel 1.0 mm × 1.5 mm Wafer Level Package Tape and Reel
CSD13306WT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 12 V
VGS Gate-to-Source Voltage ±10 V
ID Continuous Drain Current(1) 3.5 A
IDM Pulsed Drain Current (2) 44 A
PD Power Dissipation(3) 1.9 W
Tstg Storage Temperature Range –55 to 150 °C
TJ Operating Junction Temperature Range
  1. Device Operating at a temperature of 105ºC
  2. Min Cu Typ RθJA = 230ºC/W, Pulse width ≤100 μs, duty cycle ≤1%
  3. Max Cu Typ RθJA = 65ºC/W

RDS(on) vs VGS

CSD13306W D007_SLPS536.gif

Gate Charge

CSD13306W D004_SLPS536_FP.gif