SLAS468A June   2005  – August 2016 ADS7887 , ADS7888

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Companion Products
  6. Device Comparison
  7. Pin Configuration and Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics - ADS7887
    6. 8.6 Electrical Characteristics - ADS7888
    7. 8.7 Timing Requirements
    8. 8.8 Typical Characteristics
      1. 8.8.1 ADS7887 and ADS7888
      2. 8.8.2 ADS7887 Only
      3. 8.8.3 ADS7888 Only
  9. Detailed Description
    1. 9.1 Overview
      1. 9.1.1 Driving the VIN and VDD Pins of the ADS7887 and ADS7888
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 ADS7887 Operation
      2. 9.3.2 ADS7888 Operation
    4. 9.4 Device Functional Modes
      1. 9.4.1 Power-Down Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Related Links
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

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発注情報

8 Specifications

8.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
+IN to AGND –0.3 VDD + 0.3 V
+VDD to AGND –0.3 7 V
Digital input voltage to GND –0.3 7 V
Digital output to GND –0.3 VDD + 0.3 V
Power dissipation, both packages (TJ(MAX) – TA) / RθJA
Lead temperature, soldering Vapor phase (60 s) 215 °C
Infrared (15 s) 220
Junction temperature, TJ(MAX) 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
TA Operating temperature –40 125 °C

8.4 Thermal Information

THERMAL METRIC(1) ADS7887, ADS7888 UNIT
DBV (SOT-23) DCK (SC70)
6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 114.9 150.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 56.6 62.3 °C/W
RθJB Junction-to-board thermal resistance 36.5 43 °C/W
ψJT Junction-to-top characterization parameter 5.8 1.8 °C/W
ψJB Junction-to-board characterization parameter 36.2 42.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

8.5 Electrical Characteristics – ADS7887

+VDD = 2.35 V to 5.25 V, TA = –40°C to 125°C, and fsample = 1.25 MHz (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
Full-scale input voltage span(1) 0 VDD V
Absolute input voltage range +IN –0.2 VDD + 0.2 V
Ci Input capacitance(2) 21 pF
IIlkg Input leakage current TA = 125°C 40 nA
SYSTEM PERFORMANCE
Resolution 10 Bits
No missing codes 10 Bits
INL Integral nonlinearity –0.75 ±0.35 0.75 LSB(3)
DNL Differential nonlinearity –0.5 ±0.35 0.5 LSB
EO Offset error(4)(5)(6) –1.5 ±0.5 1.5 LSB
EG Gain error(5) –1 ±0.5 1 LSB
SAMPLING DYNAMICS
Conversion time 25-MHz SCLK 530 560 ns
Acquisition time 260 ns
Maximum throughput rate 25-MHz SCLK 1.25 MHz
Aperture delay 5 ns
Step Response 160 ns
Overvoltage recovery 160 ns
DYNAMIC CHARACTERISTICS
THD Total harmonic distortion(7) 100 kHz –84 –72 dB
SINAD Signal-to-noise and distortion 100 kHz 60.5 61 dB
SFDR Spurious free dynamic range 100 kHz 73 81 dB
Full power bandwidth At –3 dB 15 MHz
DIGITAL INPUT/OUTPUT
VIH High-level input voltage VDD = 2.35 V to 5.25 V VDD – 0.4 5.25 V
VIL Low-level input voltage VDD = 5 V 0.8 V
VDD = 3 V 0.4
VOH High-level output voltage At Isource = 200 µA VDD – 0.2 V
VOL Low-level output voltage At Isink = 200 µA 0.4
POWER SUPPLY REQUIREMENTS
+VDD Supply voltage 2.35 3.3 5.25 V
Supply current (normal mode) At VDD = 2.35 V to 5.25 V,
1.25-MHz throughput
2 mA
At VDD = 2.35 V to 5.25 V, static state 1.5
Power-down state supply current SCLK off 1 µA
SCLK on (25 MHz) 200
Power dissipation
at 1.25-MHz throughput
VDD = 5 V 8 10 mW
VDD = 3 V 3.8 6
Power dissipation in static state VDD = 5 V 5.5 7.5 mW
VDD = 3 V 3 4.5
Power-down time 0.1 µs
Power-up time 0.8 µs
Invalid conversions after power up 1
(1) Ideal input span; does not include gain or offset error.
(2) Refer Figure 31 for details on sampling circuit
(3) LSB means least significant bit
(4) Measured relative to an ideal full-scale input
(5) Offset error and gain error ensured by characterization.
(6) First transition of 000H to 001H at 0.5 × (Vref/210)
(7) Calculated on the first nine harmonics of the input frequency

8.6 Electrical Characteristics – ADS7888

+VDD = 2.35 V to 5.25 V, TA = –40°C to 125°C, and fsample = 1.25 MHz (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
Full-scale input voltage span(1) 0 VDD V
Absolute input voltage range +IN –0.2 VDD + 0.2 V
Ci Input capacitance(2) 21 pF
IIlkg Input leakage current TA = 125°C 40 nA
SYSTEM PERFORMANCE
Resolution 8 Bits
No missing codes 8 Bits
INL Integral nonlinearity –0.3 ±0.15 0.3 LSB(3)
DNL Differential nonlinearity –0.3 ±0.1 0.3 LSB
EO Offset error(4) (5) (6) –0.5 ±0.15 0.5 LSB
EG Gain error(5) –0.5 ±0.15 0.5 LSB
SAMPLING DYNAMICS
Conversion time 25-MHz SCLK 450 480 ns
Acquisition time 1.5 MSPS mode, see Figure 34 206 ns
Maximum throughput rate 25-MHz SCLK 1.25 MHz
Aperture delay 5 ns
Step Response 160 ns
Overvoltage recovery 160 ns
DYNAMIC CHARACTERISTICS
THD Total harmonic distortion(7) 100 kHz –67.5 –65 dB
SINAD Signal-to-noise and distortion 100 kHz 49 49.5 dB
SFDR Spurious free dynamic range 100 kHz 65 77 dB
Full power bandwidth At –3 dB 15 MHz
DIGITAL INPUT/OUTPUT
VIH High-level input voltage VDD = 2.35 V to 5.25 V VDD – 0.4 5.25 V
VIL Low-level input voltage VDD = 5 V 0.8 V
VDD = 3 V 0.4
VOH High-level output voltage At Isource = 200 µA VDD – 0.2 V
VOL Low-level output voltage At Isink = 200 µA 0.4
POWER SUPPLY REQUIREMENTS
+VDD Supply voltage 2.35 3.3 5.25 V
Supply current (normal mode) At VDD = 2.35 V to 5.25 V, 1.25-MHz throughput 2 mA
At VDD = 2.35 V to 5.25 V, static state 1.5
Power-down state supply current SCLK off 1 µA
SCLK on (25 MHz) 200
Power dissipation at 1.25 MHz throughput VDD = 5 V 8 10 mW
VDD = 3 V 3.8 6
Power dissipation in static state VDD = 5 V 5.5 7.5 mW
VDD = 3 V 3 4.5
Power-down time 0.1 µs
Power-up time 0.8 µs
Invalid conversions after power up 1
(1) Ideal input span; does not include gain or offset error.
(2) Refer Figure 31 for details on sampling circuit
(3) LSB means least significant bit
(4) Measured relative to an ideal full-scale input
(5) Offset error and gain error ensured by characterization.
(6) First transition of 000H to 001H at (Vref/28)
(7) Calculated on the first nine harmonics of the input frequency

8.7 Timing Requirements

All specifications typical at TA = –40°C to 125°C and VDD = 2.35 V to 5.25 V (unless otherwise noted; see Figure 32)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
tconv Conversion time ADS7887 VDD = 3 V 14 × tSCLK ns
VDD = 5 V 14 × tSCLK
ADS7888 VDD = 3 V 12 × tSCLK
VDD = 5V 12 × tSCLK
tq Quiet time Minimum time required from bus 3-state to start of next conversion VDD = 3 V 40 ns
VDD = 5 V 40
td1 Delay time CS low to first data (0) out VDD = 3 V 15 25 ns
VDD = 5 V 13 25
tsu1 Setup time CS low to SCLK low VDD = 3 V 10 ns
VDD = 5 V 10
td2 Delay time SCLK falling to SDO VDD = 3 V 15 25 ns
VDD = 5 V 13 25
th1 Hold time SCLK falling to data valid (with 50-pF load) VDD < 3 V 7 ns
VDD > 5 V 5.5
td3 Delay time 16th SCLK falling edge to SDO 3-state VDD = 3 V 10 25 ns
VDD = 5 V 8 20
tw1 Pulse duration CS VDD = 3 V 25 40 ns
VDD = 5 V 25 40
td4 Delay time CS high to SDO 3-state, see Figure 34 VDD = 3 V 17 30 ns
VDD = 5 V 15 25
twH Pulse duration SCLK high VDD = 3 V 0.4 × tSCLK ns
VDD = 5 V 0.4 × tSCLK
twL Pulse duration SCLK low VDD = 3 V 0.4 × tSCLK ns
VDD = 5 V 0.4 × tSCLK
Frequency SCLK VDD = 3 V 25 MHz
VDD = 5 V 25
td5 Delay time Second falling edge of clock and CS to enter in power down (use min spec not to accidently enter in power down, see Figure 35) VDD = 3 V –2 5 ns
VDD = 5 V –2 5
td6 Delay time CS and 10th falling edge of clock to enter in power down (use max spec not to accidently enter in power down, see Figure 35) VDD = 3 V 2 –5 ns
VDD = 5 V 2 –5
(1) 3-V Specifications apply from 2.35 V to 3.6 V, and 5-V specifications apply from 4.75 V to 5.25 V.

8.8 Typical Characteristics

8.8.1 ADS7887 and ADS7888

ADS7887 ADS7888 idd_vdd_7_las468.gif Figure 1. Supply Current vs Supply Voltage
ADS7887 ADS7888 idd_fs_7_las468.gif Figure 3. Supply Current vs Sample Rate
ADS7887 ADS7888 idd_fsclk_7_las468.gif Figure 2. Supply Current vs SCLK Frequency
ADS7887 ADS7888 ilkg_ta_las468.gif Figure 4. Analog Input Leakage Current
vs Free-Air Temperature

8.8.2 ADS7887 Only

ADS7887 ADS7888 sinad_fi_7_las468.gif Figure 5. Signal-to-Noise and Distortion
vs Input Frequency
ADS7887 ADS7888 thd_fi_7_las468.gif Figure 7. Total Harmonic Distortion
vs Input Frequency
ADS7887 ADS7888 sfdr_fi_7_las468.gif Figure 9. Spurious Free Dynamic Range
vs Input Frequency
ADS7887 ADS7888 eo_vdd_7_las468.gif Figure 11. Offset Error vs Supply Voltage
ADS7887 ADS7888 eg_vdd_7_las468.gif Figure 13. Gain Error vs Supply Voltage
ADS7887 ADS7888 dnl_7_las468.gif Figure 15. DNL
ADS7887 ADS7888 fft_7_las468.gif Figure 17. FFT
ADS7887 ADS7888 sinad_vdd_7_las468.gif Figure 6. Signal-to-Noise and Distortion
vs Supply Voltage
ADS7887 ADS7888 thd_vdd_7_las468.gif Figure 8. Total Harmonic Distortion
vs Supply Voltage
ADS7887 ADS7888 sfdr_vdd_7_las468.gif Figure 10. Spurious Free Dynamic Range
vs Supply Voltage
ADS7887 ADS7888 eo_ta_7_las468.gif Figure 12. Offset Error vs Free-Air Temperature
ADS7887 ADS7888 eg_ta_7_las468.gif Figure 14. Gain Error vs Free-Air Temperature
ADS7887 ADS7888 inl_7_las468.gif Figure 16. INL

8.8.3 ADS7888 Only

ADS7887 ADS7888 sinad_fi_8_las468.gif Figure 18. Signal-to-Noise and Distortion
vs Input Frequency
ADS7887 ADS7888 thd_fi_las468.gif Figure 20. Total Harmonic Distortion
vs Input Frequency
ADS7887 ADS7888 sfdr_fi_las486.gif Figure 22. Spurious Free Dynamic Range
vs Input Frequency
ADS7887 ADS7888 eo_vdd_8_las468.gif Figure 24. Offset Error vs Supply Voltage
ADS7887 ADS7888 eg_vdd_8_las468.gif Figure 26. Gain Error vs Supply Voltage
ADS7887 ADS7888 dnl_8_las468.gif Figure 28. DNL
ADS7887 ADS7888 fft_8_las468.gif Figure 30. FFT
ADS7887 ADS7888 sinad_vdd_8_las468.gif Figure 19. Signal-to-Noise and Distortion
vs Supply Voltage
ADS7887 ADS7888 thd_vdd_las468.gif Figure 21. Total Harmonic Distortion
vs Supply Voltage
ADS7887 ADS7888 sfdr_vdd_las468.gif Figure 23. Spurious Free Dynamic Range
vs Supply Voltage
ADS7887 ADS7888 eo_ta_8_las468.gif Figure 25. Offset Error vs Free-Air Temperature
ADS7887 ADS7888 eg_ta_8_las468.gif Figure 27. Gain Error vs Free-Air Temperature
ADS7887 ADS7888 inl_8_las468.gif Figure 29. INL