SLPS358C June   2012  – June 2015 CSD18503Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DQJ|8
サーマルパッド・メカニカル・データ
発注情報

4 Revision History

Changes from B Revision (November 2012) to C Revision

  • Added part number to title Go
  • Added 7-inch reel to Ordering Information table Go
  • Updated Continuous Drain Current Go
  • Updated Pulsed Drain Current Go
  • Updated pulsed current conditions Go
  • Updated Max RθJCGo
  • Updated Figure 1Go
  • Updated SOA in Figure 10Go
  • Updated Figure 12Go
  • Added Community ResourcesGo
  • Updated package dimensions Go
  • Added Recommended Stencil OpeningGo

Changes from A Revision (October 2012) to B Revision

  • Added line for max power dissipation with case temperature held to 25° CGo
  • Changed the RDS(on) vs VGS and GATE CHARGE graphsGo
  • Changed Max RθJA = 121°C/W To: Max RθJA = 125°C/WGo
  • Changed the Typical MOSFET Characteristics sectionGo

Changes from * Revision (June 2012) to A Revision

  • Changed the Transconductance TYP value From: 127 S To: 100 SGo
  • Changed the Turn On and Turn Off Delay Time, Rise andFall Time Test Conditions From: IDS = 22 A, RG = 2 Ω To: IDS = 22 A, RG = 0 ΩGo
  • Changed the Qrr Reverse Recovery Charge TYP value From: 22 nC To: 52 nCGo