SLPS684 Data sheet

SLPS684 July 2017 CSD18511KTT

PRODUCTION DATA.

5 Specifications

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	40			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 32 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	1.5	1.8	2.4	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 4.5 V, I_D = 100 A		3.2	4.2	mΩ
R_DS(on)	Drain-to-source on-resistance	V_GS = 10 V, I_D = 100 A		2.1	2.6	mΩ
g_fs	Transconductance	V_DS = 4 V, I_D = 100 A		249		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 20 V, ƒ = 1 MHz		4570	5940	pF
C_oss	Output capacitance			454	591	pF
C_rss	Reverse transfer capacitance			235	306	pF
R_G	Series gate resistance			0.9	1.8	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 20 V, I_D = 100 A		31		nC
Q_g	Gate charge total (10 V)			64		nC
Q_gd	Gate charge gate-to-drain			9.7		nC
Q_gs	Gate charge gate-to-source			17.9		nC
Q_g(th)	Gate charge at V_th			7.4		nC
Q_oss	Output charge	V_DS = 20 V, V_GS = 0 V		20.7		nC
t_d(on)	Turnon delay time	V_DS = 20 V, V_GS = 10 V, I_DS = 100 A, R_G = 0 Ω		8		ns
t_r	Rise time			6		ns
t_d(off)	Turnoff delay time			17		ns
t_f	Fall time			3		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 100 A, V_GS = 0 V		0.9	1.0	V
Q_rr	Reverse recovery charge	V_DS= 20 V, I_F = 100 A, di/dt = 300 A/μs		62		nC
t_rr	Reverse recovery time	V_DS= 20 V, I_F = 100 A, di/dt = 300 A/μs		31		ns

T_A = 25°C (unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-case thermal resistance			0.8	°C/W
R_θJA	Junction-to-ambient thermal resistance			62	°C/W

T_A = 25°C (unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

	V_DS = 5 V

Figure 3. Transfer Characteristics

	V_DS = 20 V	I_D = 100 A

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 100 A

Figure 8. Normalized On-State Resistance vs Temperature

	Single pulse, max R_θJC = 0.8°C/W

Figure 10. Maximum Safe Operating Area

	Max R_θJC = 0.8°C/W

Figure 12. Maximum Drain Current vs Temperature

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching