JAJSTN8C August 2012 – March 2024 CSD18532KCS
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Drain-to-Source Leakage Current | VGS = 0V, VDS = 48V | 1 | μA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0V, VGS = 20V | 100 | nA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250μA | 1.5 | 1.8 | 2.2 | V | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 4.5V, ID = 100A | 4.2 | 5.3 | mΩ | ||
| VGS = 10V, ID = 100A | 3.3 | 4.2 | mΩ | ||||
| gfs | Transconductance | VDS = 30V, ID = 100A | 187 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3900 | 4680 | pF | ||
| Coss | Output Capacitance | 470 | 564 | pF | |||
| Crss | Reverse Transfer Capacitance | 11 | 14 | pF | |||
| RG | Series Gate Resistance | 1.3 | 2.6 | Ω | |||
| Qg | Gate Charge Total (4.5V) | VDS = 30V, ID = 100A | 21 | 25 | nC | ||
| Qg | Gate Charge Total (10V) | 44 | 53 | nC | |||
| Qgd | Gate Charge Gate-to-Drain | 6.9 | nC | ||||
| Qgs | Gate Charge Gate-to-Source | 10 | nC | ||||
| Qg(th) | Gate Charge at Vth | 7.3 | nC | ||||
| Qoss | Output Charge | VDS = 30V, VGS = 0V | 52 | nC | |||
| td(on) | Turn On Delay Time | VDS =
30V, VGS = 10V, IDS = 100A, RG = 0Ω | 7.8 | ns | |||
| tr | Rise Time | 5.3 | ns | ||||
| td(off) | Turn Off Delay Time | 24.2 | ns | ||||
| tf | Fall Time | 5.6 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode Forward Voltage | ISD = 100A, VGS = 0V | 0.8 | 1 | V | ||
| Qrr | Reverse Recovery Charge | VDS=
30V, IF = 100A, di/dt = 300A/μs | 127 | nC | |||
| trr | Reverse Recovery Time | 57 | ns | ||||