SLPS484B January   2014  – October 2014 CSD19535KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

パッケージ・オプション

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メカニカル・データ（パッケージ｜ピン）
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発注情報

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 100 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 80 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.2 2.7 3.4 V
RDS(on) Drain-to-Source On-Resistance VGS = 6 V, ID = 100 A 3.4 4.4 mΩ
VGS = 10 V, ID = 100 A 3.1 3.6 mΩ
gfs Transconductance VDS = 10 V, ID = 100 A 274 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 50 V, ƒ = 1 MHz 6100 7930 pF
Coss Output Capacitance 1160 1500 pF
Crss Reverse Transfer Capacitance 29 38 pF
RG Series Gate Resistance 1.4 2.8 Ω
Qg Gate Charge Total (10 V) VDS = 50 V, ID = 100 A 78 101 nC
Qgd Gate Charge Gate to Drain 13 nC
Qgs Gate Charge Gate to Source 25 nC
Qg(th) Gate Charge at Vth 16 nC
Qoss Output Charge VDS = 40 V, VGS = 0 V 196 nC
td(on) Turn On Delay Time VDS = 50 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω		 32 ns
tr Rise Time 15 ns
td(off) Turn Off Delay Time 60 ns
tf Fall Time 5 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V
Qrr Reverse Recovery Charge VDS= 50 V, IF = 100 A,
di/dt = 300 A/μs		 421 nC
trr Reverse Recovery Time 89 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance 0.5 °C/W
RθJA Junction-to-Ambient Thermal Resistance 62

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
graph01_SLPS484.png
Figure 1. Transient Thermal Impedance
graph02_SLPS484.png
Figure 2. Saturation Characteristics
graph03_SLPS484.png
Figure 3. Transfer Characteristics
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Figure 4. Gate Charge
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Figure 6. Threshold Voltage vs Temperature
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Figure 8. Normalized On-State Resistance vs Temperature
graph10_SLPS484B.png
Figure 10. Maximum Safe Operating Area
graph12_SLPS484.png
Figure 12. Maximum Drain Current vs Temperature
graph05_SLPS484.png
Figure 5. Capacitance
graph07_SLPS484.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
graph09_SLPS484.png
Figure 9. Typical Diode Forward Voltage
graph11_SLPS484.png
Figure 11. Single Pulse Unclamped Inductive Switching