JAJSPB6B August 2015 – November 2022 CSD19537Q3
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 100 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 80 V | 1 | μA | |||
| IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 2.6 | 3 | 3.6 | V | |
| RDS(on) | Drain-to-source on-resistance | VGS = 6 V, ID = 10 A | 13.8 | 16.6 | mΩ | ||
| VGS = 10 V, ID = 10 A | 12.1 | 14.5 | mΩ | ||||
| gfs | Transconductance | VDS = 10 V, ID = 10 A | 45 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = 50 V, ƒ = 1 MHz | 1290 | 1680 | pF | ||
| Coss | Output capacitance | 251 | 326 | pF | |||
| Crss | Reverse transfer capacitance | 13.3 | 17.3 | pF | |||
| RG | Series gate resistance | 1.2 | 2.4 | Ω | |||
| Qg | Gate charge total (10 V) | VDS = 50 V, ID = 10 A | 16 | 21 | nC | ||
| Qgd | Gate charge gate-to-drain | 2.9 | nC | ||||
| Qgs | Gate charge gate-to-source | 5.5 | nC | ||||
| Qg(th) | Gate charge at Vth | 3.8 | nC | ||||
| Qoss | Output charge | VDS = 50 V, VGS = 0 V | 44 | nC | |||
| td(on) | Turn on delay time | VDS = 50 V, VGS = 10 V, IDS = 10 A, RG = 0 Ω | 5 | ns | |||
| tr | Rise time | 3 | ns | ||||
| td(off) | Turn off delay time | 10 | ns | ||||
| tf | Fall time | 3 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = 10 A, VGS = 0 V | 0.8 | 1 | V | ||
| Qrr | Reverse recovery charge | VDS= 50 V, IF = 10 A, di/dt = 300 A/μs | 134 | nC | |||
| trr | Reverse recovery time | 36 | ns | ||||