JAJSPB6B August   2015  – November 2022 CSD19537Q3

PRODUCTION DATA  

  1. 1特長
  2. 2アプリケーション
  3. 3概要
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • DQG|8
サーマルパッド・メカニカル・データ
発注情報

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

GUID-88DC0497-76CD-488C-AA22-AA0C20CB6FDE-low.png Figure 5-1 Transient Thermal Impedance
GUID-21FE8321-FA8C-4232-9B53-75435952E0E1-low.gifFigure 5-2 Saturation Characteristics
GUID-3281AA94-72D0-4B7B-8F46-B4C679229CDB-low.gif
ID = 10 A VDS = 50 V
Figure 5-4 Gate Charge
GUID-293AFBA9-0236-4B0D-B470-00AE21A2E7CB-low.gif
ID = 250 µA
Figure 5-6 Threshold Voltage vs Temperature
GUID-424CCCBB-BC0E-425B-A4A6-420101159CBF-low.gif
ID = 10 A
Figure 5-8 Normalized On-State Resistance vs Temperature
GUID-FF0AE93D-1945-4800-8FF0-8D01DC487668-low.gif
Single Pulse, Max RθJC = 1.5°C/W
Figure 5-10 Maximum Safe Operating Area
GUID-24FDF229-86E8-44B1-89CB-BAD0F97F777B-low.gifFigure 5-12 Maximum Drain Current vs Temperature
GUID-621E0E97-AB0C-41A1-9C7E-FB8A6AD9AC0E-low.gif
VDS = 5 V
Figure 5-3 Transfer Characteristics
GUID-42CCA698-7572-4F33-BBB1-4A5B13673CB6-low.gifFigure 5-5 Capacitance
GUID-83CAF4F6-88FA-4150-874F-8A7EBF6DCD9D-low.gifFigure 5-7 On-State Resistance vs Gate-to-Source Voltage
GUID-E58FBD6C-BBD0-4594-83E5-3E83A0E1E384-low.gifFigure 5-9 Typical Diode Forward Voltage
Figure 5-11 Single Pulse Unclamped Inductive Switching