SLPS415D September   2013  – March 2015 CSD87384M

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Power Block Performance
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Power Loss Curves
    3. 6.3 Safe Operating Curves (SOA)
    4. 6.4 Normalized Curves
    5. 6.5 Calculating Power Loss and SOA
      1. 6.5.1 Design Example
      2. 6.5.2 Calculating Power Loss
      3. 6.5.3 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Recommended PCB Design Overview
      2. 7.1.2 Electrical Performance
      3. 7.1.3 Thermal Performance
    2. 7.2 Layout Example
  8. 8Device and Documentation Support
    1. 8.1 Trademarks
    2. 8.2 Electrostatic Discharge Caution
    3. 8.3 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 CSD87384M Package Dimensions
    2. 9.2 Land Pattern Recommendation
    3. 9.3 Stencil Recommendation (100 µm)
    4. 9.4 Stencil Recommendation (125 µm)
    5. 9.5 Pin Drawing
    6. 9.6 CSD87384M Embossed Carrier Tape Dimensions

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
  • MPB|5
サーマルパッド・メカニカル・データ
発注情報

8 Device and Documentation Support

8.1 Trademarks

NexFET is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

8.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

8.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.