JAJSD35D may   2017  – december 2018 CSD88584Q5DC

PRODUCTION DATA  

  1.   1
  2. 1特長
  3. 2アプリケーション
  4. 3概要
  5. 4Revision History
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings #GUID-B332ECFA-C546-412F-9E8E-6F7DE05452E3/SLPS2234239
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Power Block Performance
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Brushless DC Motor With Trapezoidal Control
    3. 6.3 Power Loss Curves
    4. 6.4 Safe Operating Area (SOA) Curve
    5. 6.5 Normalized Power Loss Curves
    6. 6.6 Design Example – Regulate Current to Maintain Safe Operation
    7. 6.7 Design Example – Regulate Board and Case Temperature to Maintain Safe Operation
      1. 6.7.1 Operating Conditions
      2. 6.7.2 Calculating Power Loss
      3. 6.7.3 Calculating SOA Adjustments
        1.       25
  8. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Electrical Performance
      2. 7.1.2 Thermal Considerations
    2. 7.2 Layout Example
  9. 8Device and Documentation Support
    1. 8.1 ドキュメントの更新通知を受け取る方法
    2. 8.2 サポート・リソース
    3. 8.3 Trademarks
    4. 8.4 静電気放電に関する注意事項
    5. 8.5 用語集
  10. 9Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DMM|22
サーマルパッド・メカニカル・データ
発注情報

5.5 Electrical Characteristics

TJ = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = 250 µA40V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = 32 V1µA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = 20 V100nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = 250 µA1.21.72.3V
RDS(on)Drain-to-source on resistanceVGS = 4.5 V, IDS = 30 A1.01.5mΩ
VGS = 10 V, IDS = 30 A0.680.95
gfsTransconductanceVDS = 4 V, IDS = 30 A149S
DYNAMIC CHARACTERISTICS
CISSInput capacitanceVGS = 0 V, VDS = 20 V,
ƒ = 1 MHz		954012400pF
COSSOutput capacitance9571240pF
CRSSReverse transfer capacitance474616pF
RGSeries gate resistance1.02.0Ω
QgGate charge total (4.5 V)VDS = 20 V,
IDS = 30 A		6888nC
QgGate charge total (10 V)137178nC
QgdGate charge gate-to-drain26nC
QgsGate charge gate-to-source24nC
Qg(th)Gate charge at Vth16nC
QOSSOutput chargeVDS = 20 V, VGS = 0 V42nC
td(on)Turnon delay timeVDS = 20 V, VGS = 10 V,
IDS = 30 A, RG = 0 Ω		11ns
trRise time24ns
td(off)Turnoff delay time53ns
tfFall time17ns
DIODE CHARACTERISTICS
VSDDiode forward voltageIDS = 30 A, VGS = 0 V0.751.0V
QrrReverse recovery chargeVDS = 20 V, IF = 30 A,
di/dt = 300 A/µs		34nC
trrReverse recovery time24ns
GUID-E832751C-041C-4D2B-9B9F-E3092F40A83D-low.gif
Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu.
GUID-25665E75-11F5-4DB4-B70E-6F218263354D-low.gif
Max RθJA = 125°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu.