SLVSBG3C June   2012  – June 2016 DRV120

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

See (1) and (2)
MIN MAX UNIT
VIN Input voltage –0.3 28 V
Voltage on EN, STATUS, PEAK, HOLD, OSC, SENSE, RAMP –0.3 7 V
Voltage on OUT –0.3 28 V
TJ Operating virtual junction temperature –40 125 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground pin.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
IOUT Average solenoid DC current 125 mA
VIN Supply voltage 6 12 26 V
CIN Input capacitor 1 4.7 µF
L Solenoid inductance 1 H
TA Operating ambient temperature –40 105 °C

6.4 Thermal Information

THERMAL METRIC(1) DRV120 UNIT
PW [TSSOP]
8 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 183.8 122.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 69.2 51.2 °C/W
RθJB Junction-to-board thermal resistance 112.6 64.3 °C/W
ψJT Junction-to-top characterization parameter 10.4 6.5 °C/W
ψJB Junction-to-board characterization parameter 110.9 63.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

VIN = 14 V, TA = –40°C to 105°C, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
IQ Standby current EN = 0, VIN = 14 V 100 150 µA
Quiescent current EN = 1, VIN = 14 V 300 400
CURRENT DRIVER
ROUT OUT to GND resistance IOUT = 200 mA 1.7 2.5 Ω
fPWM PWM frequency OSC = GND 15 20 25 kHz
DMAX Maximum PWM duty cycle 100 %
DMIN Minimum PWM duty cycle 9 %
tD Start-up delay Delay between EN going high until driver enabled(2), fPWM = 20 kHz 25 50 µs
CURRENT CONTROLLER, INTERNAL SETTINGS
IPEAK Peak current PEAK = GND 160 200 240 mA
IHOLD Hold current HOLD = GND 40 50 60 mA
CURRENT CONTROLLER, EXTERNAL SETTINGS
tKEEP(1) Externally set keep time at peak current CKEEP = 1 µF 75 ms
IPEAK Externally set peak current RPEAK = 50 kΩ 250 mA
RPEAK = 200 kΩ 83
IHOLD Externally set hold current RHOLD = 50 kΩ 100 mA
RHOLD = 200 kΩ 33
fPWM Externally set PWM frequency ROSC = 50 kΩ 60 kHz
ROSC = 200 kΩ 20
LOGIC INPUT LEVELS (EN)
VIL Input low level 1.3 V
VIH Input high level 1.65 V
REN Input pullup resistance 350 500 kΩ
LOGIC OUTPUT LEVELS (STATUS)
VOL Output low level Pulldown activated, ISTATUS = 2 mA 0.3 V
IIL Output leakage current Pulldown deactivated, V(STATUS) = 5 V 1 µA
UNDERVOLTAGE LOCKOUT
VUVLO Undervoltage lockout threshold 4.6 V
THERMAL SHUTDOWN
TTSD Junction temperature shutdown threshold 160 °C
TTSU Junction temperature start-up threshold 140 °C
(1) Either internal or external tKEEP time setting is selected to be activated during manufacturing of production version of DRV120.
(2) Logic HIGH between 4 V and 7 V. Note: absolute maximum voltage rating is 7 V.

6.6 Typical Characteristics

DRV120 DRV120_TypicalCharacteristics.png Figure 1. Solenoid Current, EN, and PWM vs Time