SLVSD29 October   2015 DRV8704

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  PWM Motor Drivers
      2. 7.3.2  Direct PWM Input Mode (Dual Brushed DC Gate Driver)
      3. 7.3.3  Current Regulation
      4. 7.3.4  Decay Modes
      5. 7.3.5  Blanking Time
      6. 7.3.6  Gate Drivers
      7. 7.3.7  Configuring Gate Drivers
      8. 7.3.8  External FET Selection
      9. 7.3.9  Protection Circuits
        1. 7.3.9.1 Overcurrent Protection (OCP)
        2. 7.3.9.2 Gate Driver Fault (PDF)
        3. 7.3.9.3 Thermal Shutdown (TSD)
        4. 7.3.9.4 Undervoltage Lockout (UVLO)
      10. 7.3.10 Serial Data Format
    4. 7.4 Device Functional Modes
    5. 7.5 Register Maps
      1. 7.5.1 Control Registers
        1. 7.5.1.1 CTRL Register (Address = 0x00h)
          1. Table 4. CTRL Register
        2. 7.5.1.2 TORQUE Register (Address = 0x01h)
          1. Table 5. TORQUE Register
        3. 7.5.1.3 OFF Register (Address = 0x02h)
          1. Table 6. OFF Register
        4. 7.5.1.4 BLANK Register (Address = 0x03h)
          1. Table 7. BLANK Register
        5. 7.5.1.5 DECAY Register (Address = 0x04h)
          1. Table 8. DECAY Register
        6. 7.5.1.6 Reserved Register Address = 0x05h
          1. Table 9. Reserved Register
        7. 7.5.1.7 DRIVE Register Address = 0x06h
          1. Table 10. DRIVE Register
        8. 7.5.1.8 STATUS Register (Address = 0x07h)
          1. Table 11. STATUS Register
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External FET Selection
        2. 8.2.2.2 IDRIVE Configuration
        3. 8.2.2.3 Current Chopping Configuration
        4. 8.2.2.4 Decay Modes
        5. 8.2.2.5 Sense Resistor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.2.2.2 IDRIVE Configuration

IDRIVE is selected based on the gate charge of the FETs. The IDRIVEx and TDRIVEx registers need to be configured so that the FET gates are charged completely during TDRIVE. If IDRIVE is chosen to be too low for a given FET, or if TDRIVE is less than the intended rise time, then the FET may not turn on completely. TI suggests to adjust these values in-system with the required external FETs and motor to determine the best possible setting for any application.

For FETs with a known gate-to-drain charge Qgd and desired rise time RT, IDRIVE and TDRIVE can be selected based on:

Equation 8. DRV8704 eq_06_IDRIVE_lvsd29.gif
Equation 9. TDRIVE > 2 × RT

Example:

If the gate-to-drain charge is 5.9 nC, and the desired rise time is around 20 to 100 ns:

IDRIVE1 = 6.7 nC / 20 ns = 335 mA

IDRIVE2 = 6.7 nC / 100 ns = 67 mA

Select IDRIVE between 67 and 335 mA.

We select IDRIVEP as 200-mA source and IDRIVEP as 400-mA sink.

We select TDRIVEN and TDRIVEP as 525 ns.