JAJSQ42A april   2023  – june 2023 ESD441

PRODUCTION DATA  

  1.   1
  2. 1特長
  3. 2アプリケーション
  4. 3概要
  5. 4Revision History
  6. 5Pin Configuration and Functions
  7. 6Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—JEDEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  8. 7Application and Implementation
    1. 7.1 Application Information
  9. 8Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 ドキュメントの更新通知を受け取る方法
    3. 8.3 サポート・リソース
    4. 8.4 Trademarks
    5. 8.5 静電気放電に関する注意事項
    6. 8.6 用語集
  10. 9Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • DPL|2
サーマルパッド・メカニカル・データ
発注情報

Electrical Characteristics

At TA=25℃ (unless otherwise noted) (1)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO <100 nA, across operating temperature range 5.5 V
ILEAK Reverse leakage current VIO = 5.5 V, IO to GND 1 50 nA
VBR Break-down voltage IIO = 1 mA, IO to GND 6 7 8 V
VFWD Forward voltage IIO = 1 mA,  GND to IO 0.8 V
VHOLD Holding voltage (2) TLP, IO to GND 6.2 V
VCLAMP Clamping voltage with TLP (2) IPP = 1 A, TLP, IO to GND 6.3 V
IPP = 5 A, TLP, IO to GND 6.5 V
IPP = 16 A, TLP, IO to GND 7.6 V
IPP =16 A, TLP, GND to IO 3.8 V
Clamping voltage with surge strike (4) IPP = 6 A, tp = 8/20 µs , IO to GND 7.6 V
RDYN Dynamic resistance (3) IO to GND 0.1 Ω
GND to IO 0.16
CL Line capacitance VIO = 0 V;  ƒ = 1 MHz, Vpp = 30 mV, IO to GND 1 pF
Typical parameters are measured at 25℃
Transition line pulse with 100 ns width and 10 ns rise and fall time
Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A
Nonrepetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5