SNVS325E January 2005 – January 2016 LM2852
PRODUCTION DATA.
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| PVIN, AVIN, EN, SNS | 6.5 | V | ||
| Power dissipation | Internally limited | |||
| 14-Pin exposed pad HTSSOP package | Infrared (15 sec) | 220 | °C | |
| Vapor phase (60 sec) | 215 | °C | ||
| Maximum junction temperature | 150 | °C | ||
| Storage temperature, Tstg | −65 | 150 | °C | |
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| PVIN to GND | 1.5 | 5.5 | V | |
| AVIN to GND | 2.85 | 5.5 | V | |
| Junction temperature | −40 | 125 | °C | |
| THERMAL METRIC(1) | LM2852 | UNIT | |
|---|---|---|---|
| PWP (HTTSOP) | |||
| 14 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 39.2 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 24.1 | °C/W |
| RθJB | Junction-to-board thermal resistance | 20.1 | °C/W |
| ψJT | Junction-to-top characterization parameter | 0.6 | °C/W |
| ψJB | Junction-to-board characterization parameter | 19.8 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 1.7 | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| SYSTEM PARAMETERS | |||||||
| VOUT | Voltage tolerance(1) |
VOUT = 0.8-V option | 0.782 | 0.818 | V | ||
| VOUT = 1-V option | 0.9775 | 1.0225 | |||||
| VOUT = 1.2-V option | 1.173 | 1.227 | |||||
| VOUT = 1.5-V option | 1.4663 | 1.5337 | |||||
| VOUT = 1.8-V option | 1.7595 | 1.8405 | |||||
| VOUT = 2.5-V option | 2.4437 | 2.5563 | |||||
| VOUT = 3-V option | 2.9325 | 3.0675 | |||||
| VOUT = 3.3-V option | 3.2257 | 3.3743 | |||||
| ΔVOUT/ ΔAVIN | Line regulation(1) | VOUT = 0.8 V, 1 V, 1.2 V, 1.5 V, 1.8 V or 2.5 V, 2.85 V ≤ AVIN ≤ 5.5 V |
TJ = –40°C to 125°C | 0.6% | |||
| TJ = 25°C | 0.2% | ||||||
| VOUT = 3.3 V, 3.5 V ≤ AVIN ≤ 5.5 V |
TJ = –40°C to 125°C | 0.6% | |||||
| TJ = 25°C | 0.2% | ||||||
| ΔVOUT/ΔIO | Load regulation | Normal operation | TJ = 25°C | 8 | mV/A | ||
| VON | UVLO threshold (AVIN) | Rising | TJ = –40°C to 125°C | 2.85 | V | ||
| TJ = 25°C | 2.47 | ||||||
| Falling hysteresis | TJ = –40°C to 125°C | 85 | 210 | mV | |||
| TJ = 25°C | 150 | ||||||
| rDSON-P | PFET ON resistance | Isw = 2 A | TJ = –40°C to 125°C | 140 | mΩ | ||
| TJ = 25°C | 75 | ||||||
| rDSON-N | NFET ON resistance | Isw = 2 A | TJ = –40°C to 125°C | 120 | mΩ | ||
| TJ = 25°C | 55 | ||||||
| RSS | Soft-start resistance | TJ = 25°C | 400 | kΩ | |||
| ICL | Peak current limit threshold | LM2852X | TJ = –40°C to 125°C | 2.75 | 4.95 | A | |
| TJ = 25°C | 4 | ||||||
| LM2852Y | TJ = –40°C to 125°C | 2.25 | 3.65 | ||||
| TJ = 25°C | 3 | ||||||
| IQ | Operating current | Non-switching | TJ = –40°C to 125°C | 2 | mA | ||
| TJ = 25°C | 0.85 | ||||||
| ISD | Shutdown quiescent current | EN = 0 V | TJ = –40°C to 125°C | 25 | µA | ||
| TJ = 25°C | 10 | ||||||
| RSNS | Sense pin resistance | TJ = 25°C | 400 | kΩ | |||
| PWM | |||||||
| fosc | LM2852X | 1500-kHz option. | TJ = –40°C to 125°C | 1050 | 1825 | kHz | |
| TJ = 25°C | 1500 | ||||||
| LM2852Y | 500-kHz option. | TJ = –40°C to 125°C | 325 | 625 | kHz | ||
| TJ = 25°C | 500 | ||||||
| Drange | Duty cycle | 0% | 100% | ||||
| ENABLE CONTROL(2) | |||||||
| VIH | EN pin minimum high input | 75 | % of AVIN | ||||
| VIL | EN pin maximum low input | 25 | % of AVIN | ||||
| IEN | EN pin pullup current | EN = 0 V | TJ = 25°C | 1.2 | µA | ||
| THERMAL CONTROLS | |||||||
| TSD | TJ for thermal shutdown | TJ = 25°C | 165 | °C | |||
| TSD-HYS | Hysteresis for thermal shutdown | TJ = 25°C | 10 | °C | |||
Figure 1. Efficiency vs ILoad VOUT = 1.5 V
Figure 3. Efficiency vs ILoad VOUT = 3.3 V
Figure 2. Efficiency vs ILoad VOUT = 2.5 V
Figure 4. Frequency vs Temperature
Figure 5. Efficiency vs ILoad VOUT = 1.5 V
Figure 7. Efficiency vs ILoad VOUT = 3.3 V
Figure 6. Efficiency vs ILoad VOUT = 2.5 V
Figure 8. Frequency vs Temperature
Figure 9. NMOS Switch RDSON vs Temperature
Figure 10. PMOS Switch RDSON vs Temperature