SNVSAG9 March   2016 LM5022-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings: LM5022-Q1
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 High Voltage Start-Up Regulator
      2. 7.3.2 Input Undervoltage Detector
      3. 7.3.3 Error Amplifier
      4. 7.3.4 Current Sensing and Current Limiting
      5. 7.3.5 PWM Comparator and Slope Compensation
      6. 7.3.6 Soft Start
      7. 7.3.7 MOSFET Gate Driver
      8. 7.3.8 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Oscillator, Shutdown, and SYNC
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Switching Frequency
        2. 8.2.2.2  MOSFET
        3. 8.2.2.3  Output Diode
        4. 8.2.2.4  Boost Inductor
        5. 8.2.2.5  Output Capacitor
        6. 8.2.2.6  VCC Decoupling Capacitor
        7. 8.2.2.7  Input Capacitor
        8. 8.2.2.8  Current Sense Filter
        9. 8.2.2.9  RSNS, RS2 and Current Limit
        10. 8.2.2.10 Control Loop Compensation
        11. 8.2.2.11 Efficiency Calculations
          1. 8.2.2.11.1 Chip Operating Loss
          2. 8.2.2.11.2 MOSFET Switching Loss
          3. 8.2.2.11.3 MOSFET and RSNS Conduction Loss
          4. 8.2.2.11.4 Output Diode Loss
          5. 8.2.2.11.5 Input Capacitor Loss
          6. 8.2.2.11.6 Output Capacitor Loss
          7. 8.2.2.11.7 Boost Inductor Loss
          8. 8.2.2.11.8 Total Loss
          9. 8.2.2.11.9 Efficiency
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Filter Capacitors
      2. 10.1.2 Sense Lines
      3. 10.1.3 Compact Layout
      4. 10.1.4 Ground Plane and Shape Routing
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Design Support
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.1.2 Design Support

WEBENCH software uses an iterative design procedure and accesses comprehensive databases of components. For more details, go to www.ti.com/webench.

11.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.3 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.