JAJSQD6 November   2023 LMG3616

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 GaN Power FET Switching Parameters
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 GaN Power FET Switching Capability
      2. 7.3.2 Turn-On Slew-Rate Control
      3. 7.3.3 Input Control Pin (IN)
      4. 7.3.4 AUX Supply Pin
        1. 7.3.4.1 AUX Power-On Reset
        2. 7.3.4.2 AUX Under-Voltage Lockout (UVLO)
      5. 7.3.5 Overtemperature Protection
      6. 7.3.6 Fault Reporting
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Turn-On Slew-Rate Design
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Solder-Joint Stress Relief
        2. 8.4.1.2 Signal-Ground Connection
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 ドキュメントの更新通知を受け取る方法
    3. 9.3 サポート・リソース
    4. 9.4 Trademarks
    5. 9.5 静電気放電に関する注意事項
    6. 9.6 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5.1 Absolute Maximum Ratings

Unless otherwise noted: voltages are respect to AGND(1)
MIN MAX UNIT
VDS Drain-source (D to S) voltage, FET off 650 V
VDS(surge) Drain-source (D to S) voltage, surge condition, FET off(2) 720 V
VDS(tr)(surge) Drain-source (D to S) transient ringing peak voltage, surge condition, FET off(2) 800 V
Pin voltage AUX –0.3 30 V
IN, FLT –0.3 VAUX + 0.3 V
RDRV –0.3 4 V
ID(cnts) Drain (D to S) continuous current, FET on  –4 4 A
ID(pulse)(oc) Drain (D to S) pulsed current, tp < 10 µs, FET on(3)  10.7 A
IS(cnts) Source (S to D) continuous current, FET off 4 A
Positive sink current FLT (while asserted) Internally limited mA
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature –40 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) See GaN Power FET Switching Capability for more information on the GaN power FET switching capability.
(3) GaN power FET may self-limit below this value if it enters saturation.