SLVSKK4
March 2026
LMG3660R025
PRODUCT PREVIEW
1
1
Features
2
Applications
3
Description
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Switching Characteristics
6
Parameter Measurement Information
6.1
Switching Parameters
6.1.1
Turn-On Times
6.1.2
Turn-Off Times
6.1.3
Drain-Source Turn-On and Turn-off Slew Rate
6.1.4
Zero-Voltage Detection Times (LMG3666R025 only)
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.2.1
LMG3660R025 Functional Block Diagram
7.2.2
LMG3661R025 Functional Block Diagram
7.2.3
LMG3666R025 Functional Block Diagram
7.2.4
LMG3667R025 Functional Block Diagram
7.3
Feature Description
7.3.1
Drive Strength Adjustment
7.3.2
GaN Power FET Switching Capability
7.3.3
VDD Supply
7.3.4
Overcurrent and Short-Circuit Protection
7.3.5
Overtemperature Protection
7.3.6
UVLO Protection
7.3.7
Fault Reporting
7.3.8
Auxiliary LDO (LMG3661R025 Only)
7.3.9
Zero-Voltage Detection (ZVD) (LMG3666R025 Only)
7.4
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
Slew Rate Selection
8.2.2.2
Signal Level-Shifting
8.3
Power Supply Recommendations
8.3.1
Using an Isolated Power Supply
8.3.2
Using a Bootstrap Diode
8.3.2.1
Diode Selection
8.3.2.2
Managing the Bootstrap Voltage
9
Device and Documentation Support
9.1
Receiving Notification of Documentation Updates
9.2
Support Resources
9.3
Trademarks
9.4
Electrostatic Discharge Caution
9.5
Glossary
10
Revision History
11
Mechanical, Packaging, and Orderable Information
57
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Data Sheet
LMG366xR025
650V
25
mΩ GaN FET With Integrated Driver and Protection