SNAS579G March   2012  – December 2014 LMK00105

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Functional Block Diagram
  4. Revision History
  5. Pin Configuration and Diagrams
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Vdd and Vddo Power Supplies
      2. 7.3.2 Clock Input
        1. 7.3.2.1 Selection of Clock Input
          1. 7.3.2.1.1 CLKin/CLKin* Pins
          2. 7.3.2.1.2 OSCin/OSCout Pins
      3. 7.3.3 Clock Outputs
        1. 7.3.3.1 Output Enable Pin
        2. 7.3.3.2 Using Less than Five Outputs
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Clock Inputs
      2. 8.1.2 Clock Outputs
    2. 8.2 Typical Applications
      1. 8.2.1 Typical Application Block Diagram
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Crystal Interface
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. Power Supply Recommendations
    1. 9.1 Power Supply Filtering
    2. 9.2 Power Supply Ripple Rejection
    3. 9.3 Power Supply Bypassing
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Ground Planes
      2. 10.1.2 Power Supply Pins
      3. 10.1.3 Differential Input Termination
      4. 10.1.4 Output Termination
    2. 10.2 Layout Example
    3. 10.3 Thermal Management
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Differential Voltage Measurement Terminology
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
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発注情報

Design Requirements

The value of capacitor and resistor depend on the crystal. Each crystal is specified with a load capacitance and resistor is used to avoid over driving the crystal.

The example crystal specifications are given in Table 5.

Table 5. Example 25-MHz Crystal Electrical Specifications

NO. ITEM SYMBOL ELECTRICAL SPECIFICATION
MIN TYP MAX UNIT
1 Nominal Frequency F0 25 MHz
2 Mode of Vibration Fundamental
3 Frequency Tolerance ΔF/F0 –15 15 ppm
4 Load Capacitance CL 9 pF
5 Drive Level DL 100 300 µW
6 Equivalent Series Resistance R1 9 50 Ω
7 Shunt Capacitance C0 2.1 ± 15% pF
8 Motional Capacitance C1 9.0 ± 15% fF
9 Motional Inductance L 4.6 ± 15% mH
10 Frequency Stability TC –20 20 ppm
11 C0/C1 Rate 250

Based on the OSCin shunt capacitance and stray capacitance, C1 and C2 are chosen as 6.8 pF to make the load capacitance (CL) to be 9 pF. Suggested value of RLIM is 1.5 kΩ. Refer to Detailed Design Procedure for the derivation.