SNVSA66A October 2014 – December 2015 LP3990-Q1
PRODUCTION DATA.
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Input voltage | –0.3 | 6.5 | V | |
| Output voltage | –0.3 | See(4) | V | |
| ENABLE input voltage | –0.3 | 6.5 | V | |
| Continuous power dissipation internally limited | See(5) | |||
| Storage temperature range , Tstg | –65 | 150 | °C | |
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2000 | V |
| Charged-device model (CDM), per AEC Q100-011 | ±1500 | |||
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| Input voltage, VIN | 2 | 6 | V | ||
| Enable input voltage, VEN | 0 | VIN | V | ||
| Junction temperature, TJ(1) | –40 | 125 | °C | ||
| THERMAL METRIC(1) | LP3990 | UNIT | |
|---|---|---|---|
| YZR (DSBGA) | |||
| 4 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 188.9 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 1.0 | °C/W |
| RθJB | Junction-to-board thermal resistance | 105.3 | °C/W |
| ψJT | Junction-to-top characterization parameter | 0.7 | °C/W |
| ψJB | Junction-to-board characterization parameter | 105.2 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VIN | Input voltage | See(3) | 2 | 6 | V | ||
| ΔVOUT | Output voltage tolerance | ILOAD = 1 mA, TJ = 25°C | –1% | 1% | |||
| Over full line and load regulation | –2.5% | 2.5% | |||||
| Line regulation error | VIN = (VOUT(NOM) + 1 V) to 6 V | 0.1 | 0.02 | 0.1 | %/V | ||
| Load regulation error | IOUT = 1 mA to 150 mA |
VOUT = 0.8 V to 1.95 V | –0.005 | 0.002 | 0.005 | %/mA | |
| VOUT = 2 V to 3.3 V | –0.002 | 0.0005 | 0.002 | ||||
| VDO | Dropout voltage | IOUT = 150 mA, see(4)(5) | 120 | 200 | mV | ||
| ILOAD | Load current | TJ = 25°, see(5)(6) | 0 | µA | |||
| IQ | Quiescent current | VEN = 950 mV, IOUT = 0 mA | 43 | 80 | µA | ||
| VEN = 950 mV, IOUT = 150 mA | 65 | 120 | |||||
| VEN = 0.4 V (output disabled), TJ = 25°C | 0.002 | 0.2 | |||||
| ISC | Short circuit current limit | See(7) | 550 | 1000 | mA | ||
| IOUT | Maximum output current | 150 | |||||
| PSRR | Power Supply Rejection Ratio | ƒ = 1 kHz, IOUT = 1 mA to 150 mA | 55 | dB | |||
| ƒ = 10 kHz, IOUT = 150 mA | 35 | ||||||
| eη | Output noise voltage(5) | BW = 10 Hz to 100 kHz | VOUT = 0.8 V | 60 | µVRMS | ||
| VOUT = 1.5 V | 125 | ||||||
| VOUT = 3.3 V | 180 | ||||||
| TSHUTDOWN | Thermal shutdown junction temperature | Junction temperature (TJ) rising until the output is disabled | 155 | °C | |||
| Hysteresis | 15 | ||||||
| ENABLE CONTROL CHARACTERISTICS | |||||||
| IEN(8) | Maximum input current at EN pin | VEN = 0 V (Output is disabled) TJ = 25°C |
0.001 | 0.1 | µA | ||
| VEN = 6 V | 2.5 | 6 | 10 | ||||
| VIL | Low input threshold | VIN = 2 V to 6 V VEN falling from ≥ VIH until the output is disabled |
0.4 | V | |||
| VIH | High input threshold | VIN = 2 V to 6 V VEN rising from ≤ VIL until the output is enabled |
0.95 | ||||
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| COUT | Output capacitance | Capacitance(3) | 0.7(2) | 1 | 500 | µF |
| ESR | 5 | mΩ | ||||
| MIN | NOM(1) | MAX(2) | UNIT | ||||
|---|---|---|---|---|---|---|---|
| TON | Turnon time(3) | From VEN ↑ VIH to VOUT 95% level (VIN(MIN) to 6 V) |
VOUT = 0.8 V | 80 | 150 | µs | |
| VOUT = 1.5 V | 105 | 200 | |||||
| VOUT = 3.3 V | 175 | 250 | |||||
| Transient response | Line transient response (ΔVOUT) | Trise = Tfall = 30 µs(3), ΔVIN = 600 mV |
8 | 16 | mV (pk-pk) | ||
| Load transient response (ΔVOUT) | Trise = Tfall = 1 µs(3), IOUT = 1 mA to 150 mA COUT = 1 µF |
55 | 100 | mV | |||
| ILOAD = 0 mA | ||
| ILOAD = 150 mA | ||
| ILOAD = 1 mA | ||