SLLS408H January   2000  – October 2016 MAX3222

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: Device
    6. 6.6  Electrical Characteristics: Driver
    7. 6.7  Electrical Characteristics: Receiver
    8. 6.8  Switching Characteristics: Driver
    9. 6.9  Switching Characteristics: Receiver
    10. 6.10 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power
      2. 8.3.2 RS232 Driver
      3. 8.3.3 RS232 Receiver
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • PW|20
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage, VCC(2) –0.3 6 V
Positive output supply voltage, V+(2) –0.3 7 V
Negative output supply voltage, V–(2) 0.3 -7 V
Supply voltage difference, V+ – V– 13 V
Input voltage, VI Drivers, EN, PWRDOWN –0.3 6 V
Receiver –25 25
Output voltage, VO Drivers –13.2 13.2 V
Receivers –0.3 VCC + 0.3
Operating virtual junction temperature, TJ 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to network GND.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
RIN, DOUT, and GND pins (1)		 Pins 8, 9, 16, 17 and 18 ±15000 V
All other pins ±3000
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) All pins ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1). See Figure 8.
MIN NOM MAX UNIT
Supply voltage VCC = 3.3 V 3 3.3 3.6 V
VCC = 5 V 4.5 5 5.5
VIH Driver and control high-level input voltage DIR, EN, PWRDOWN VCC = 3.3 V 2 V
VCC = 5 V 2.4
VIL Driver and control low-level input voltage DIR, EN, PWRDOWN 0.8 V
VI Driver and control input voltage DIR, EN, PWRDOWN 0 5.5 V
VI Receiver input voltage –25 25 V
TA Operating free-air temperature MAX3222C 0 70 ºC
MAX3222I –40 85
(1) Test conditions are C1−C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.4 Thermal Information

THERMAL METRIC(1)(2)(3) MAX3222 UNIT
DB (SSOP) DW (SOIC) PW (TSSOP)
20 PINS 20 PINS 20 PINS
RθJA Junction-to-ambient thermal resistance 84.4 70.2 94.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 44.1 36.2 29.9 °C/W
RθJB Junction-to-board thermal resistance 40 37.9 45.1 °C/W
ψJT Junction-to-top characterization parameter 11 11.1 1.4 °C/W
ψJB Junction-to-board characterization parameter 39.5 37.5 44.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) − TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
(3) The package thermal impedance is calculated in accordance with JESD 51-7.

6.5 Electrical Characteristics: Device

over operating free-air temperature range (unless otherwise noted)(2). See Figure 8.
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
II Input leakage current (EN, PWRDOWN) ±0.01 ±1 µA
ICC Supply current No load, PWRDOWN at VCC 0.3 1 mA
Supply current (powered off) No load, PWRDOWN at GND 1 10 µA
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Test conditions are C1−C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.6 Electrical Characteristics: Driver

over operating free-air temperature range (unless otherwise noted)(2). See Figure 8.
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VOH High-level output voltage DOUT at RL = 3 kΩ to GND, DIN = GND 5 5.4 V
VOL Low-level output voltage DOUT at RL = 3 kΩ to GND, DIN = VCC –5 –5.4 V
IIH High-level input current VI = VCC ±0.01 ±1 µA
IIL Low-level input current VI at GND ±0.01 ±1 µA
IOS Short-circuit output current VCC = 3.6 V, VO = 0 V ±35 ±60 mA
VCC = 5.5 V, VO = 0 V
ro Output resistance VCC, V+, and V– = 0 V, VO = ±2 V 300 10M Ω
Ioff Output leakage current PWRDOWN = GND, VO = ±12 V, VCC = 3 V to 3.6 V ±25 µA
PWRDOWN = GND, VO = ±10 V, VCC = 4.5 V to 5.5 V ±25
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Test conditions are C1−C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.7 Electrical Characteristics: Receiver

over operating free-air temperature range (unless otherwise noted)(2). See Figure 8.
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VOH High-level output voltage IOH = –1 mA VCC – 0.6 VCC – 0.1 V
VOL Low-level output voltage IOL = 1.6 mA 0.4 V
VIT+ Positive-going input threshold voltage VCC = 3.3 V 1.5 2.4 V
VCC = 5 V 1.8 2.4
VIT– Negative-going input threshold voltage VCC = 3.3 V 0.6 1.2 V
VCC = 5 V 0.8 1.5
Vhys Input hysteresis (VIT+ – VIT–) 0.3 V
Ioff Output leakage current EN = VCC ±0.05 ±10 µA
ri Input resistance VI = ±3 V to ±25 V 3 5 7 kΩ
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Test conditions are C1−C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.8 Switching Characteristics: Driver

over operating free-air temperature range (unless otherwise noted)(3). See Figure 8.
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
Maximum data rate CL = 1000 pF, RL = 3 kΩ, One DOUT switching, see Figure 3 150 250 kbps
tsk(p) Pulse skew(2) CL = 150 pF to 2500 pF, RL = 3 kΩ to 7 kΩ, see Figure 4 300 ns
SR(tr) Slew rate, transition region (see Figure 3) RL = 3 kΩ to 7 kΩ, VCC = 3.3 V CL = 150 pF to 1000 pF 6 30 V/µs
CL = 150 pF to 2500 pF 4 30
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
(3) Test conditions are C1−C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.9 Switching Characteristics: Receiver

over operating free-air temperature range (unless otherwise noted)(3). See Figure 8.
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
tPLH Propagation delay time, low- to high-level output CL = 150 pF, see Figure 5 300 ns
tPHL Propagation delay time, high- to low-level output CL = 150 pF, see Figure 5 300 ns
ten Output enable time CL = 150 pF, RL = 3 kΩ, see Figure 6 200 ns
tdis Output disable time CL = 150 pF, RL = 3 kΩ, see Figure 6 200 ns
tsk(p) Pulse skew(2) See Figure 5 300 ns
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
(3) Test conditions are C1−C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.10 Typical Characteristics

TA = 25° C; VCC = 3.3V
MAX3222 VOH_MAX3222.gif Figure 1. Driver VOH vs Load Current
MAX3222 VOL_MAX3222.gif Figure 2. Driver VOL vs Load Current