Table 5-36 FRAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
| PARAMETER |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
|
Read and write endurance |
|
1015 |
|
|
cycles |
| tRetention |
Data retention duration |
TJ = 25°C |
100 |
|
|
years |
| TJ = 70°C |
40 |
|
|
| TJ = 85°C |
10 |
|
|
| IWRITE |
Current to write into FRAM |
|
|
IREAD(1) |
|
nA |
| IERASE |
Erase current |
|
|
N/A(2) |
|
nA |
| tWRITE |
Write time |
|
|
tREAD(3) |
|
ns |
| tREAD |
Read time, NWAITSx = 0 |
|
|
1 / fSYSTEM(4) |
|
ns |
| Read time, NWAITSx = 1 |
|
|
2 / fSYSTEM(4) |
|
(1) Writing to FRAM does not require a setup sequence or additional power when compared to reading from FRAM. The FRAM read current IREAD is included in the active mode current consumption numbers IAM,FRAM.
(2) N/A = not applicable. FRAM does not require a special erase sequence.
(3) Writing into FRAM is as fast as reading.
(4) The maximum read (and write) speed is specified by fSYSTEM using the appropriate wait state settings (NWAITSx).