JAJSMH9O august   2009  – july 2023 SN65HVD3082E , SN65HVD3085E , SN65HVD3088E , SN75HVD3082E

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information, SN65HVD308xE
    5. 6.5  Thermal Information, SNx5HVD3082E
    6. 6.6  Electrical Characteristics: Driver
    7. 6.7  Electrical Characteristics: Receiver
    8. 6.8  Electrical Characteristics
    9. 6.9  Switching Characteristics: Driver
    10. 6.10 Switching Characteristics
    11. 6.11 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Data Rate and Bus Length
        2. 9.2.1.2 Stub Length
        3. 9.2.1.3 Bus Loading
        4. 9.2.1.4 Receiver Fail-safe
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Power Usage in an RS-485 Transceiver
        2. 9.2.2.2 Low-Power Shutdown Mode
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations for IC Packages
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 サード・パーティ製品に関する免責事項
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 サポート・リソース
    4. 12.4 Trademarks
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 用語集
  14. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Electrical Characteristics: Receiver

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYP(1)MAXUNIT
VIT+Positive-going differential input threshold voltageIO = –8 mA–85–10mV
VIT–Negative-going differential input threshold voltageIO = 8 mA–200–115mV
VhysHysteresis voltage (VIT+ – VIT–)30mV
VOHHigh-level output voltageVID = 200 mV, IOH = –8 mA (see Figure 7-8)44.6V
VOLLow-level output voltageVID = –200 mV, IO = 8 mA (see Figure 7-8)0.150.4V
IOZHigh-impedance-state output currentVO = 0 or VCC, RE = VCC–11μA
IIBus input currentVIH = 12 V, VCC = 5 V0.040.1mA
VIH = 12 V, VCC = 0 V0.060.125
VIH = –7 V, VCC = 5 V–0.1–0.04
VIH = –7 V, VCC = 0 V–0.05–0.03
IIHHigh-level input current, ( RE)VIH = 2 V–60–30μA
IILLow-level input current, ( RE)VIL = 0.8 V–60–30μA
CdiffDifferential input capacitanceVI = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V7pF
All typical values are at 25°C and with a 5-V supply.