JAJSCH3 September   2016 SN65HVS883

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
  4. 改訂履歴
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Input Characteristics
    9. 6.9 Typical Voltage Regulator Performance Characteristics
  7. Parameter Measurement Information
    1. 7.1 Waveforms
    2. 7.2 Signal Conventions
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Digital Inputs
      2. 8.3.2 Debounce Filter
      3. 8.3.3 Shift Register
      4. 8.3.4 Voltage Regulator
      5. 8.3.5 Supply Voltage Monitor
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 System-Level EMC
      2. 9.1.2 Input Channel Switching Characteristics
      3. 9.1.3 Digital Interface Timing
      4. 9.1.4 Cascading for High Channel Count Input Modules
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Stage
        2. 9.2.2.2 Setting Debounce Time
        3. 9.2.2.3 Example: High-Voltage Sensing Application
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 Third-Party Products Disclaimer
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V24 Field power input V24 –0.3 36 V
VIPx Field digital inputs IPx –0.3 36 V
VID Voltage at any logic input DB0, DB1, CLK, SIP, CE, LD –0.5 6 V
IO Output current CHOK, SOP ±8 mA
PTOT Continuous total power dissipation See Thermal Information table
TJ Junction temperature 170 °C

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) All pins ±4000 V
IPx,V24 ±15000
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) All pins ±1000
Machine Mode(3) All pins ±100
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) JEDEC Standard 22, Method A115-A.

6.3 Recommended Operating Conditions

MIN TYP MAX UNIT
V24 Field supply voltage 10 24 34 V
VIPL Field input low-state input voltage(1) 0 4 V
VIPH Field input high-state input voltage(1) 10 34 V
VIL Logic low-state input voltage 0 0.8 V
VIH Logic high-state input voltage 2 5.5 V
RLIM Current limiter resistor 17 25 500
fIP Input data rate(2) 0 1 Mbps
TJ 150 °C
TA –40 85 °C
(1) Field input voltages correspond to an input resistor of RIN = 1.2 kΩ
(2) Maximum data rate corresponds to 0 ms debounce time, (DB0 = open, DB1 = FGND), and RIN = 0 Ω

6.4 Thermal Information

THERMAL METRIC(1) SN65HVS883 UNIT
PWP (HTSSOP)
28 PINS
RθJA Junction-to-ambient thermal resistance 35 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 4.27 °C/W
RθJB Junction-to-board thermal resistance 15 °C/W
PD Device power dissipation ILOAD = 50 mA, RIN = 0, IPO–IP7 = V24 = 30 V,
RE7 = FGND, fCLK = 100 MHz,
IIP-LIM and ICC = worst case with RLIM = 25 kΩ
2591 mW
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

all voltages measured against FGND unless otherwise stated, see Figure 12
SYMBOL PARAMETER PIN TEST CONDITIONS MIN TYP MAX UNIT
VTH–(IP) Low-level device input threshold voltage IP0–IP7 18 V< V24 < 34 V,
RIN = 0 Ω ,
RLIM = 25 kΩ
4 4.3 V
VTH+(IP) High-level device input threshold voltage 5.2 5.5 V
VHYS(IP) Device input hysteresis 0.9 V
VTH–(IN) Low-level field input threshold voltage measured at
field side of RIN
18 V < V24 < 34 V,
RIN = 1.2 kΩ ± 5%,
RLIM = 25 kΩ
6 8.4 V
VTH+(IN) High-level field input threshold voltage 9.4 10 V
VHYS(IN) Field input hysteresis 1 V
VTH–(V24) Low-level V24-monitor threshold voltage V24 15 16.05 V
VTH+(V24) High-level V24-monitor threshold voltage 16.8 18 V
VHYS(V24) V24-monitor hysteresis 0.75 V
RIP Input resistance IP0–IP7 3 V < VIPx < 6 V,
RIN = 1.2 kΩ ± 5%,
RLIM = 25 kΩ
1.4 1.83 2.3
IIP-LIM Input current limit 10 V < VIPx < 34 V,
RLIM = 25 kΩ
3.15 3.6 4 mA
VOL Logic low-level output voltage SOP, CHOK IOL = 20 μA 0.4 V
VOH Logic high-level output voltage IOH = –20 μA 4 V
IIL Logic input leakage current DB0, DB1, SIP,
LD, CE, CLK
–50 50 μA
IRE-on RE on-state current RE0–RE7 RLIM = 25 kΩ,
REX = FGND
2.8 3.15 3.5 mA
ICC(V24) Supply current V24 IP0 to IP7 = V24,
5VOP = open,
REX = FGND,
All logic inputs open
8.7 mA
VO(5V) Linear regulator output voltage 5VOP 18 V < V24 < 34 V,
no load
4.5 5 5.5 V
18 V < V24 < 34 V,
IL = 50 mA
4.5 5 5.5
ILIM(5V) Linear regulator output current limit 115 mA
ΔV5/ΔV24 Line regulation 5VOP, V24 18 V < V24 < 34 V,
IL = 5 mA
2 mV/V
tDB Debounce times of input channels IP0–IP7 DB0 = open,
DB1 = FGND
0 ms
DB0 = FGND,
DB1 = open
1
DB0 = DB1 = open 3
tDB-HL Voltage monitor debounce time after V24 < 15 V (CHOK turns low) V24, CHOK 1 ms
tDB-LH Voltage monitor debounce time after V24 > 18 V (CHOK turns high) 6 ms
TSHDN Shutdown temperature 170 °C

6.6 Timing Requirements

over operating free-air temperature range (unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNIT
tW1 CLK pulse width See Figure 9 4 ns
tW2 LD pulse width See Figure 7 6 ns
tSU1 SIP to CLK setup time See Figure 10 4 ns
tH1 SIP to CLK hold time See Figure 10 2 ns
tSU2 Falling edge to rising edge (CE to CLK) setup time See Figure 11 4 ns
tREC LD to CLK recovery time See Figure 8 2 ns
fCLK Clock pulse frequency (50% duty cycle) See Figure 9 DC 100 MHz

6.7 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH1, tPHL1 CLK to SOP CL = 15 pF, see Figure 9 10 ns
tPLH2, tPHL2 LD to SOP CL = 15 pF, see Figure 7 14 ns
tr, tf Rise and fall times CL = 15 pF, see Figure 9 5 ns

6.8 Typical Input Characteristics

SN65HVS883 g_typinput_sllsee6.gif
RIN = 1.2 kΩ a) IIP-LIM = 2.5 mA (RLIM = 36.1 kΩ)
b) IIP-LIM = 3.0 mA (RLIM = 30.1 kΩ)
c) IIP-LIM = 3.6 mA (RLIM = 24.9 kΩ)
Figure 1. Typical Input Characteristics
SN65HVS883 g_ilimiter_tj_slasee6.gif
V24 = 24 V VIN = 24 V RIN = 1.2 kΩ
RLIM = 24.9 kΩ
Figure 2. Typical Current Limiter Variation vs Ambient Temperature
SN65HVS883 g_vlimiter_tj_slasee6.gif
V24 = 24 V RIN = 1.2 kΩ RLIM = 24.9 kΩ
Figure 3. Typical Limiter Threshold Voltage Variation vs Ambient Temperature

6.9 Typical Voltage Regulator Performance Characteristics

SN65HVS883 g_linereg_slasee6.gif
ILOAD = 5 mA TA = 27°C
Figure 4. Line Regulation
SN65HVS883 g_loadreg_slasee6.gif
RLOAD = 100 Ω
Figure 6. Output Voltage vs Input Voltage
SN65HVS883 g_outv_ta_slasee6.gif
ILOAD = 0 mA
Figure 5. Output Voltage vs Ambient Temperature