JAJSOF8I February   1994  – October 2022 SN55LBC180 , SN65LBC180 , SN75LBC180

PRODUCTION DATA  

  1. 1 特長
  2. 2 概要
  3. 3 概要 (続き)
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Dissipation Rating Table
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information Table
    5. 6.5 Driver Section
      1. 6.5.1 Electrical Characteristics
      2. 6.5.2 Switching Characteristics
      3. 6.5.3 Switching Characteristics: SN55LBC180
    6. 6.6 Receiver Section
      1. 6.6.1 Electrical Characteristics
      2. 6.6.2 Switching Characteristics
      3. 6.6.3 Switching Characteristics: SN55LBC180
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Function Tables
    2. 8.2 Schematics of Inputs and Outputs
  9. 9 Application and Implementation
    1. 9.1 Application Information
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 サポート・リソース
    3. 10.3 商標
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

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メカニカル・データ（パッケージ｜ピン）
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サーマルパッド・メカニカル・データ
発注情報

10.4 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.