SLVSDG4B March   2016  – August 2016 TPD1E04U04

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  IEC 61000-4-2 ESD Protection
      2. 7.3.2  IEC 61000-4-4 EFT Protection
      3. 7.3.3  IEC 61000-4-5 Surge Protection
      4. 7.3.4  IO Capacitance
      5. 7.3.5  Ultra-Low ESD Clamping Voltage
      6. 7.3.6  Low RDYN
      7. 7.3.7  DC Breakdown Voltage
      8. 7.3.8  Ultra Low Leakage Current
      9. 7.3.9  Supports High Speed Interfaces
      10. 7.3.10 Industrial Temperature Range
      11. 7.3.11 Easy Flow-Through Routing Package
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DPY|2
  • DPL|2
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Electrical fast transient IEC 61000-4-4 (5/50 ns) 80 A
Peak pulse IEC 61000-4-5 power (tp - 8/20 µs) - DPY Package 19 W
IEC 61000-4-5 power (tp - 8/20 µs) - DPL Package 16 W
IEC 61000-4-5 current (tp - 8/20 µs) 2.5 A
TA Operating free-air temperature –40 125 °C
Tstg Storage temperature –65 155 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 ESD Ratings—IEC Specification

VALUE UNIT
V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±16000 V
IEC 61000-4-2 air-gap discharge ±16000

6.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIO Input pin voltage 0 3.6 V
TA Operating free-air temperature –40 125 °C

6.5 Thermal Information

THERMAL METRIC(1) TPD1E04U04 TPD1E04U04 UNIT
DPY (X1SON) DPL (X2SON)
2 PINS 2 PINS
RθJA Junction-to-ambient thermal resistance 683.6 574 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 494.2 332.2 °C/W
RθJB Junction-to-board thermal resistance 568.7 237.6 °C/W
ψJT Junction-to-top characterization parameter 217.4 150.2 °C/W
ψJB Junction-to-board characterization parameter 568.7 238.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO < 10 nA 3.6 V
VBR Breakdown voltage, IO pin to GND TA = 25°C(1) 4.5 6.2 7.5 V
VF Forward diode voltage, GND to IO pin IIO = 1 mA, TA = 25°C 0.8 V
VHOLD Holding voltage IIO = 1 mA 5.3 V
VCLAMP Clamping voltage IPP = 1 A, TLP, from IO to GND 5.3 V
IPP = 16 A, TLP, from IO to GND 8.9
IPP = 1 A, TLP, from GND to IO 1.3
IPP = 16 A, TLP, from GND to IO 4.6
ILEAK Leakage current, any IO to GND VIO = 2.5 V 0.1 10 nA
RDYN Dynamic resistance IO to GND 0.25 Ω
GND to IO 0.18
CL Line capacitance VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C 0.5 0.65 pF
(1) Measured as the maximum voltage before device snaps back into VHOLD voltage.

6.7 Typical Characteristics

TPD1E04U04 D012_SLVSDG4.gif
Figure 1. Positive TLP Curve
TPD1E04U04 D006_SLVSDG4.gif
Figure 3. 8-kV IEC Waveform
TPD1E04U04 D010_SLVSDG4.gif
Figure 5. Surge Curve (tp = 8/20µs), IO Pin to GND
TPD1E04U04 D017_SLVSDG4.gif
Figure 7. Leakage Current vs Temperature
TPD1E04U04 D016_SLVSDG4.gif
Figure 9. Capacitance vs Frequency
TPD1E04U04 D014_SLVSDG4.gif
Figure 2. Negative TLP Curve
TPD1E04U04 D007_SLVSDG4.gif
Figure 4. –8-kV IEC Waveform
TPD1E04U04 D011_SLVSDG4.gif
Figure 6. Capacitance vs Bias Voltage
TPD1E04U04 D009_SLVSDG4.gif
Figure 8. DC Voltage Sweep I-V Curve
TPD1E04U04 D008_SLVSDG4.gif
Figure 10. Insertion Loss
TPD1E04U04 HDMI2_noDUT_FS.gif
Figure 11. HDMI2.0 6-Gbps TP2 Eye Diagram (Bare Board)
TPD1E04U04 HDMI2_TPD1E04U04_FS.gif
Figure 12. HDMI2.0 6-Gbps TP2 Eye Diagram (With TPD1E04U04)