SLVSCU3 December   2014 TPS2592ZA

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Application Schematic
  5. Revision History
  6. Device Comparison Table
  7. Pin Configuration and Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 GND
      2. 9.3.2 VIN
      3. 9.3.3 dV/dT
      4. 9.3.4 BFET
      5. 9.3.5 EN/UVLO
      6. 9.3.6 ILIM
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Simple 2.1-A eFuse Protection for Set Top Boxes
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Step by Step Design Procedure
          2. 10.2.1.2.2 Programming the Current-Limit Threshold: RILIM Selection
          3. 10.2.1.2.3 Undervoltage Lockout Set Point
          4. 10.2.1.2.4 Setting Output Voltage Ramp Time (TdVdT)
            1. 10.2.1.2.4.1 Case 1: Start-up without Load: Only Output Capacitance COUT Draws Current During Start-up
            2. 10.2.1.2.4.2 Case 2: Start-up with Load: Output Capacitance COUT and Load Draws Current During Start-up
        3. 10.2.1.3 Support Component Selection - CVIN
        4. 10.2.1.4 Application Curves
    3. 10.3 Maximum Device Power Dissipation Considerations
  11. 11Power Supply Recommendations
    1. 11.1 Transient Protection
    2. 11.2 Output Short-Circuit Measurements
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Related Links
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

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発注情報

8 Specifications

8.1 Absolute Maximum Ratings

over operating temperature range (unless otherwise noted) (1) (2)
MIN MAX UNIT
Supply voltage range(1) VIN –0.3 20 V
VIN (10 ms Transient) 22
Output voltage OUT –0.3 VIN + 0.3 V
OUT (Transient < 1 µs) -1.2 V
Voltage ILIM –0.3 7 V
EN/UVLO –0.3 7
dV/dT –0.3 7
BFET –0.3 30
Continuous power dissipation See the Thermal Information
Maximum power dissipation(3),
PD = (VVIN-VOUT)*ILIMIT
TA = –40°C to +85°C 40 W
TA = 0°C to +85°C 50
Storage temperature range, Tstg -65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential voltages, are with respect to network ground terminal.
(3) Refer detailed explanation in the application section Maximum Device Power Dissipation Considerations .

8.2 ESD Ratings

MAX UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
Input voltage range VIN 4.5 18(1) V
BFET 0 VIN+6
dV/dT, EN/UVLO 0 6
ILIM 0 3.3
Continuous output current IOUT 0 1.7 A
Resistance ILIM 10 45.3
External capacitance OUT 0.1 1 1000 µF
dV/dT 1 1000 nF
Operating junction temperature range, TJ –40 25 125 °C
Operating Ambient temperature range, TA –40 25 85 °C
(1) Maximum voltage (including input transients) at VIN pin should not exceed absolute maximum rating as specified in Absolute Maximum Ratings.

8.4 Thermal Information(1)

over operating free-air temperature range (unless otherwise noted)
THERMAL METRIC TPS2592Zx UNIT
DRC (10) PINS
RθJA Junction-to-ambient thermal resistance 45.9 °C/W
RθJCtop Junction-to-case (top) thermal resistance 53
RθJB Junction-to-board thermal resistance 21.2
ψJT Junction-to-top characterization parameter 1.2
ψJB Junction-to-board characterization parameter 21.4
RθJCbot Junction-to-case (bottom) thermal resistance 5.9
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics

–40°C ≤ TJ ≤ 125°C, VIN = 12 V, VEN /UVLO = 2 V, RILIM = 45.3 kΩ, CdVdT = OPEN. All voltages referenced to GND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN (INPUT SUPPLY)
VUVR UVLO threshold, rising 4.15 4.3 4.45 V
VUVhyst UVLO hysteresis(1) 5.4%
IQON Supply current Enabled: EN/UVLO = 2 V 0.2 0.42 0.65 mA
IQOFF EN/UVLO = 0 V 0.1 0.25 mA
EN/UVLO (ENABLE/UVLO INPUT)
VENR EN Threshold voltage, rising 1.37 1.4 1.44 V
VENF EN Threshold voltage, falling 1.32 1.35 1.39 V
IEN EN Input leakage current 0 V ≤ VEN ≤ 5V –100 0 100 nA
dV/dT (OUTPUT RAMP CONTROL)
IdVdT dV/dT Charging current(1) VdVdT = 0 V 220 nA
RdVdT_disch dV/dT Discharging resistance EN/UVLO = 0 V, IdVdT = 10 mA sinking 50 73 100 Ω
VdVdTmax dV/dT Max capacitor voltage(1) 5.5 V
GAINdVdT dV/dT to OUT gain(1) ΔVdVdT 4.85 V/V
ILIM (CURRENT LIMIT PROGRAMMING)
IILIM ILIM Bias current(1) 10 µA
IOL Overload current limit(2) RILIM = 45.3 kΩ, VVIN-OUT = 1 V 1.79 2.10 2.42 A
IOL-R-Short RILIM = 0 Ω, Shorted Resistor Current Limit (Single Point Failure Test: UL60950)(1) 0.7 A
IOL-R-Open RILIM = OPEN, Open Resistor Current Limit (Single Point Failure Test: UL60950)(1) 0.55 A
ISCL Short-circuit current limit(2) RILIM = 45.3 kΩ, VVIN-OUT = 12 V 1.66 1.98 2.29 A
RATIOFASTRIP Fast-Trip comparator level w.r.t. overload current limit(1) IFASTRIP : IOL 160%
VOpenILIM ILIM Open resistor detect threshold(1) VILIM Rising, RILIM = OPEN 3.1 V
OUT (PASS FET OUTPUT)
RDS(on) FET ON resistance TJ = 25°C 21 28 33
T= 125°C 39 46
IOUT-OFF-LKG OUT Bias current in off state VEN/UVLO = 0 V, VOUT = 0 V (Sourcing) –5 0 1 µA
IOUT-OFF-SINK VEN/UVLO = 0V, VOUT = 300 mV (Sinking) 10 15 20
BFET (BLOCKING FET GATE DRIVER)
IBFET BFET Charging current(1) VBFET = VOUT 2 µA
VBFETmax BFET Clamp voltage(1) VVIN + 6.4 V
RBFETdisch BFET Discharging resistance to GND VEN/UVLO = 0 V, IBFET = 100 mA 15 26 36 Ω
TSD (THERMAL SHUT DOWN)
TSHDN TSD Threshold, rising(1) 160 °C
TSHDNhyst TSD Hysteresis(1) 10 °C
Thermal fault: latched or autoretry TPS2592ZL LATCHED
TPS2592ZA AUTO-RETRY
(1) These parameters are provided for reference only and do not constitute part of TI's published device specifications for purposes of TI's product warranty.
(2) Pulsed testing techniques used during this test maintain junction temperature approximately equal to ambient temperature.

8.6 Timing Requirements

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TON Turn-on delay(1) EN/UVLO → H to IVIN = 100 mA, 1-A resistive load at OUT 220 µs
tOFFdly Turn Off delay(1) EN↓ to BFET↓, CBFET = 0 0.4 µs
dV/dT (OUTPUT RAMP CONTROL)
tdVdT Output ramp time EN/UVLO → H to OUT = 11.7 V, CdVdT = 0 0.7 1 1.3 ms
EN/UVLO → H to OUT = 11.7 V,
CdVdT = 1 nF(1)
12
ILIM (CURRENT LIMIT PROGRAMMING)
tFastOffDly Fast-Trip comparator delay(1) IOUT > IFASTRIP to IOUT= 0 (Switch Off) 3 µs
BFET (BLOCKING FET GATE DRIVER)
tBFET-ON BFET Turn-On duration(1) EN/UVLO → H to VBFET = 12 V, CBFET = 1 nF 4.2 ms
EN/UVLO → H to VBFET = 12 V, CBFET = 10 nF 42
tBFET-OFF BFET Turn-off duration(1) EN/UVLO → L to VBFET = 1 V, CBFET = 1 nF 0.4 µs
EN/UVLO → L to VBFET = 1 V, CBFET = 10 nF 1.4
(1) These parameters are provided for reference only and do not constitute part of TI's published device specifications for purposes of TI's product warranty.

8.7 Typical Characteristics

TJ = 25°C, VVIN = 12 V, VEN/UVLO = 2 V, RILIM = 45.3 kΩ, CVIN = 0.1 µF, COUT = 1 µF, CdVdT = OPEN (unless stated otherwise)
TPS2592ZA TPS2592ZL C001_SLVSC11.png
Figure 1. Input UVLO vs Temperature
TPS2592ZA TPS2592ZL C003_SLVSC11.png
TPS2592Zx
Figure 3. IVIN-ON vs VIN
TPS2592ZA TPS2592ZL C010_SLVSC11.png
Figure 5. IdVdT vs Temperature
TPS2592ZA TPS2592ZL C015_revB_SLVSC11.gif
Figure 7. VEN_VIH, VEN_VIL vs Temperature
TPS2592ZA TPS2592ZL fig17_revB2_lvsc11.gif
TPS2592Zx, CdVdT = OPEN, COUT = 4.7 µF
Figure 9. Transient: Output Ramp:
TPS2592ZA TPS2592ZL fig022_revB_SLVSC11.gif
EN↓
Figure 11. Turn Off Delay to BFET
TPS2592ZA TPS2592ZL C026_SLVSC11.png
Figure 13. RDSON vs Temperature
TPS2592ZA TPS2592ZL C032_SLVSC11.png
45.3 kΩ
Figure 15. IOL, ISC vs Temperature
TPS2592ZA TPS2592ZL C034_SLVSC11.png
RILIM = OPEN
Figure 17. IOL-R-Open vs Temperature
TPS2592ZA TPS2592ZL fig36_revB2_lvsc11.gif
Figure 19. Transient: Output Short Circuit
TPS2592ZA TPS2592ZL fig40_revB2_lvsc11.gif
ILOAD Stepped From 50% to 120%, back to 50%
Figure 21. Transient: Overload Current Limit
TPS2592ZA TPS2592ZL fig42_revB2_lvsc11.gif
TPS2592ZL
Figure 23. Transient: Thermal Fault Latched
TPS2592ZA TPS2592ZL C002_SLVSC11.png
Figure 2. IQOFF vs VIN
TPS2592ZA TPS2592ZL C009B_SLVSC11.png
Figure 4. TON vs Temperature
TPS2592ZA TPS2592ZL C013_SLVSC11.png
TPS2592Zx
Figure 6. TdVdT vs CdVdT
TPS2592ZA TPS2592ZL C016_SLVSC11.png
Figure 8. IEN (Leakage Current) vs VEN
TPS2592ZA TPS2592ZL fig21_revB2_lvsc11.gif
EN ↓
Figure 10. Transient: Turn Off Delay
TPS2592ZA TPS2592ZL fig23_revB2_lvsc11.gif
VIN↓
Figure 12. Turn Off Delay to BFET
TPS2592ZA TPS2592ZL C029_SLVSC11.gif
45.3 kΩ
Figure 14. IOUT vs VVIN-OUT
TPS2592ZA TPS2592ZL C033_SLVSC11.png
RILIM = 0
Figure 16. IOL-R-Short vs Temperature
TPS2592ZA TPS2592ZL C035_SLVSC11.png
Figure 18. VOpenILIM vs Temperature
TPS2592ZA TPS2592ZL fig037_revB_SLVSC11.gif
Figure 20. Short Circuit (Zoom): Fast-trip Comparator
TPS2592ZA TPS2592ZL fig41_revB2_lvsc11.gif
TPS2592ZA
Figure 22. Transient: Thermal Fault Auto-Retry
TPS2592ZA TPS2592ZL fig43_revB_lvsc11.gif
TPS2592Zx, CdVdT = OPEN, COUT = 10 µF
Figure 24. Transient: Output Ramp