SLVSC16B August   2013  – July 2016 TPS43330A-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DC Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Boost Controller
      2. 7.3.2 Gate-Driver Supply (VREG, EXTSUP)
      3. 7.3.3 External P-Channel Drive (GC2) and Reverse Battery Protection
      4. 7.3.4 Undervoltage Lockout and Overvoltage Protection
      5. 7.3.5 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Buck Controllers: Normal Mode PWM Operation
        1. 7.4.1.1 Frequency Selection and External Synchronization
        2. 7.4.1.2 Enable Inputs
        3. 7.4.1.3 Feedback Inputs
        4. 7.4.1.4 Soft-Start Inputs
        5. 7.4.1.5 Current-Mode Operation
        6. 7.4.1.6 Current Sensing and Current Limit With Foldback
        7. 7.4.1.7 Slope Compensation
        8. 7.4.1.8 Power-Good Outputs and Filter Delays
        9. 7.4.1.9 Light-Load PFM Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Boost Component Selection
        2. 8.2.2.2  Boost Maximum Input Current IIN_MAX
        3. 8.2.2.3  Boost Inductor Selection, L
        4. 8.2.2.4  Inductor Ripple Current, IRIPPLE
        5. 8.2.2.5  Peak Current in Low-Side FET, IPEAK
        6. 8.2.2.6  Right Half-Plane Zero RHP Frequency, fRHP
        7. 8.2.2.7  Output Capacitor, COUTx
        8. 8.2.2.8  Bandwidth of Boost Converter, fC
        9. 8.2.2.9  Output Ripple Voltage Due to Load Transients, ∆VOUTx
        10. 8.2.2.10 Selection of Components for Type II Compensation
        11. 8.2.2.11 Input Capacitor, CIN
        12. 8.2.2.12 Output Schottky Diode D1 Selection
        13. 8.2.2.13 Low-Side MOSFET (BOT_SW3)
        14. 8.2.2.14 BuckA Component Selection
          1. 8.2.2.14.1 BuckA Component Selection
          2. 8.2.2.14.2 Current-Sense Resistor RSENSE
        15. 8.2.2.15 Inductor Selection L
        16. 8.2.2.16 Inductor Ripple Current IRIPPLE
        17. 8.2.2.17 Output Capacitor COUTA
        18. 8.2.2.18 Bandwidth of Buck Converter fC
        19. 8.2.2.19 Selection of Components for Type II Compensation
        20. 8.2.2.20 Resistor Divider Selection for Setting VOUTA Voltage
        21. 8.2.2.21 BuckB Component Selection
        22. 8.2.2.22 Resistor Divider Selection for Setting VOUT Voltage
        23. 8.2.2.23 BuckX High-Side and Low-Side N-Channel MOSFETs
      3. 8.2.3 Application Curves
    3. 8.3 System Examples
      1. 8.3.1 Example 1
      2. 8.3.2 Example 2
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Boost Converter
      2. 10.1.2 Buck Converter
      3. 10.1.3 Other Considerations
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation Derating Profile, 38-Pin HTTSOP PowerPAD Package
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

11.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.3 Trademarks

PowerPAD, E2E are trademarks of Texas Instruments.

All other trademarks are the property of their respective owners.

11.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.