JAJSGZ2B DECEMBER   2011  – February 2019 TPS53219A

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Enable and Soft-Start
      2. 7.3.2  Adaptive ON-Time D-CAP Control and Frequency Selection
      3. 7.3.3  Small Signal Model
      4. 7.3.4  Ramp Signal
      5. 7.3.5  Adaptive Zero Crossing
      6. 7.3.6  Output Discharge Control
      7. 7.3.7  Low-Side Driver
      8. 7.3.8  High-Side Driver
      9. 7.3.9  Power Good
      10. 7.3.10 Current Sense and Overcurrent Protection
      11. 7.3.11 Overvoltage and Undervoltage Protection
      12. 7.3.12 UVLO Protection
      13. 7.3.13 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Light Load Condition in Auto-Skip Operation
      2. 7.4.2 Forced Continuous Conduction Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Typical Application With Power Block
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 External Components Selection
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Typical Application With Ceramic Output Capacitors
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 External Parts Selection With All Ceramic Output Capacitors
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントの更新通知を受け取る方法
    2. 11.2 コミュニティ・リソース
    3. 11.3 商標
    4. 11.4 静電気放電に関する注意事項
    5. 11.5 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.3.7 Low-Side Driver

The low-side driver is designed to drive high-current low-RDS(on) N-channel MOSFETs. The drive capability is represented by its internal resistance, which is 1.0 Ω for VDRV to DRVL and 0.5 Ω for DRVL to GND. A dead time to prevent shoot through is internally generated between high-side MOSFET off to low-side MOSFET on, and low-side MOSFET off to high-side MOSFET on. The bias voltage VDRV can be delivered from 6.2-V VREG supply or from external power source from 4.5 V to 6.5 V. The instantaneous drive current is supplied by an input capacitor connected between the VDRV and PGND pins.

The average low-side gate drive current is calculated in Equation 3.

Equation 3. TPS53219A q_igl_lusaa0.gif

When VDRV is supplied by external voltage source, the device continues to be supplied by the VREG pin. There is no internal connection from VDRV to VREG.