SLVSBM7A Data sheet

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Voltage	VIN	–0.3	62	V
	EN⁽²⁾	–0.3	8	V
	BOOT-PH		8	V
	BOOT		70	V
	VSENSE	–0.3	6	V
	COMP	–0.3	3	V
	PH	–0.6	62	V
	PH, 10-ns transient	–2	62	V
	RT/CLK	–0.3	6	V
Current	VIN	Internally limited		A
	BOOT		100	mA
	PH	Internally limited		A
Operating junction temperature		–40	150	ºC
Storage temperature, T_stg		–65	150	ºC

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) See Enable and Adjusting Undervoltage Lockout.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per QSS 009-105 (JESD22-A114A) and AEC-Q100 Classification Level H2⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per QSS 009-147 (JESD22-C101B.01) and AEC-Q100 500V Classification Level C3B⁽²⁾	±750	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	MAX	UNIT
Input voltage, V_IN	4.7	60	V
Output current		200	mA
Switching frequency set by RT/CLK resistor	50	1100	kHz
Switching frequency synchronized to external clock	300	1100	kHz

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS54061-Q1	UNIT
		DRB (SON)
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	42.9	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	46.0	°C/W
R_θJB	Junction-to-board thermal resistance	18.1	°C/W
ψ_JT	Junction-to-top characterization parameter	0.5	°C/W
ψ_JB	Junction-to-board characterization parameter	18.3	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	3.0	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

T_J = –40°C to 150°C, V_IN = 4.7 to 60 V (unless otherwise noted)⁽¹⁾

PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE (VIN PIN)
Operating input voltage		4.7		60	V
Shutdown supply current	EN = 0 V		1.4		µA
I_Q operating; non-switching	VSENSE = 0.9 V, V_IN = 12 V		90	110	µA
ENABLE AND UVLO (EN PIN)
Enable threshold	Rising		1.23	1.4	V
Enable threshold	Falling	1	1.18		V
Input current	Enable threshold 50 mV		–4.7		µA
Input current	Enable threshold –50 mV		–1.2		µA
Hysteresis			–3.5		µA
Enable high to start switching time			450		µs
V_IN
VIN start voltage	V_IN rising		4.5		V
VOLTAGE REFERENCE
Voltage reference	T_J = 25°C, V_IN = 12 V	0.792	0.8	0.808	V
Voltage reference	1 mA < I_OUT < Minimum current limit	0.784	0.8	0.816	V
HIGH-SIDE MOSFET
Switch resistance	BOOT-PH = 5.7 V		1.5	3	Ω
LOW-SIDE MOSFET
Switch resistance	V_IN = 12 V		0.8	1.5	Ω
ERROR AMPLIFIER
Input current	VSENSE pin		20		nA
Error-amplifier gm	–2 µA < I_(COMP) < 2 µA, V_(COMP) = 1 V		108		µMhos
EA gm during slow-start	–2 µA < I_(COMP) < 2 µA, V_(COMP) = 1 V, VSENSE = 0.4 V		27		µMhos
Error amplifier DC gain	VSENSE = 0.8 V		1000		V/V
Minimum unity-gain bandwidth			0.5		MHz
Error amplifier source and sink	V_(COMP) = 1 V, 100-mV overdrive		±8		µA
Start-switching threshold			0.57		V
COMP to Iswitch gm			1		A/V
CURRENT LIMIT
High-side sourcing current-limit threshold	BOOT-PH = 5.7 V	250	350	500	mA
Zero-cross detect current			–1.1		mA
THERMAL SHUTDOWN
Thermal shutdown			176		C
RT/CLK
Operating frequency using RT mode		50		1100	kHz
Switching frequency	R_(RT/CLK) = 120 kΩ	425	472	520	kHz
Minimum CLK pulse duration			40		ns
RT/CLK voltage	R_(RT/CLK) = 120 kΩ		0.53		V
RT/CLK high threshold				1.8	V
RT/CLK low threshold		0.5			V
RT/CLK falling-edge to PH rising-edge delay	Measure at 500 kHz with RT resistor		67		ns
PLL lock-in time	Measure at 500 kHz		100		µs
PLL frequency range		300		1100	kHz
PH
Minimum ON-time	Measured at 50% to 50%, I_OUT = 200 mA		120		ns
Dead time	V_IN = 12 V, I_OUT= 200 mA, one transition		30		ns
BOOT
BOOT-to-PH regulation voltage	V_IN = 12 V		6		V
BOOT-PH UVLO			2.9		V
INTERNAL SLOW-START TIME
Slow-start time	f_SW = 472 kHz, RT = 120 kΩ, 10% to 90%		2.36		ms

(1) The electrical ratings specified in this section apply to all specifications in this document unless otherwise noted. These specifications are interpreted as conditions that do not degrade the parametric or functional specifications of the device for the life of the product containing it.