JAJSHZ6B December   2008  – September 2019 TPS737-Q1

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      代表的なアプリケーション回路
  4. 改訂履歴
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Output Noise
      2. 7.3.2 Internal Current Limit
      3. 7.3.3 Enable Pin and Shutdown
      4. 7.3.4 Reverse Current
      5. 7.3.5 Thermal Protection
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input and Output Capacitor Requirements
        2. 8.2.2.2 Dropout Voltage
        3. 8.2.2.3 Transient Response
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Improve PSRR and Noise Performance
      2. 10.1.2 Power Dissipation
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントのサポート
      1. 11.1.1 関連資料
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 コミュニティ・リソース
    4. 11.4 商標
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 Glossary
  12. 12メカニカル、パッケージ、および注文情報
    1. 12.1 パッケージの取り付け

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Enable Pin and Shutdown

The enable pin (EN) is active high and is compatible with standard TTL-CMOS levels. A VEN below 0.5 V (maximum) turns the regulator off and drops the GND pin current to approximately 10 nA. When EN is used to shutdown the regulator, all charge is removed from the pass transistor gate, and the output ramps back up to a regulated VOUT (see Figure 21).

When shutdown capability is not required, EN can be connected to VIN. However, the pass gate may not be discharged using this configuration, and the pass transistor may be left on (enhanced) for a significant time after VIN is removed. This scenario can result in reverse current flow (if the IN pin is low impedance) and faster ramp times upon power-up. In addition, for VIN ramp times slower than a few milliseconds, the output may overshoot upon power-up.