JAJSPU0B February   2023  – December 2023 TPS7H3302-SEP , TPS7H3302-SP

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Options
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VTT Sink and Source Regulator
      2. 7.3.2 Reference Input (VDDQSNS)
      3. 7.3.3 Reference Output (VTTREF)
      4. 7.3.4 EN Control (EN)
      5. 7.3.5 Power-Good Function (PGOOD)
      6. 7.3.6 VTT Current Protection
      7. 7.3.7 VIN UVLO Protection
      8. 7.3.8 Thermal Shutdown
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VDD Capacitor
        2. 8.2.2.2 VLDO Input Capacitor
        3. 8.2.2.3 VTT Output Capacitor
        4. 8.2.2.4 VTTSNS Connection
        5. 8.2.2.5 Low VDD Applications
        6. 8.2.2.6 S3 and Pseudo-S5 Support
        7. 8.2.2.7 Tracking Startup and Shutdown
        8. 8.2.2.8 Output Tolerance Consideration for VTT DIMM or Module Applications
        9. 8.2.2.9 LDO Design Guidelines
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
      3. 8.4.3 Thermal Considerations
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 サポート・リソース
    4. 9.4 Trademarks
    5. 9.5 静電気放電に関する注意事項
    6. 9.6 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

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発注情報

8.2.2.9 LDO Design Guidelines

For TPS7H3302, a minimum of 420 mV (VLDOINMIN – VTTMAX) is needed in order to support a Gm driven sourcing current of 2 A based on the specified dropout voltage maximum at VDDQSNS = 1.5 V. Because the TPS7H3302 is essentially a Gm-driven LDO, its impedance characteristics are both a function of the 1/Gm and RDS(on) of the sourcing MOSFET (see TPS7H3302 Impedance Characteristics). The current inflection point of the design is between 3 A and 4 A. When ISRC is less than the inflection point, the LDO is considered to be operating in the Gm region; when ISRC is greater than the inflection point but less than the overcurrent limit point, the LDO is operating in the RDS(on) region. The typical sourcing RDS(on) is 154 mΩ with VIN = 3 V and TJ = 125°C.

GUID-0F5F9DF7-6166-4F05-A0F1-DE07A89DABDE-low.gif Figure 8-9 TPS7H3302 Impedance Characterisitcs