JAJSD13B March   2017  – February 2020 TCA9802

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      概略回路図
  4. 改訂履歴
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Integrated Current Source
      2. 9.3.2 Ultra-Low Power Consumption
      3. 9.3.3 No Static-Voltage Offset
      4. 9.3.4 Active-High Repeater Enable Input
      5. 9.3.5 Powered Off High Impedance I2C Bus Pins on A-Side
      6. 9.3.6 Powered-Off Back-Power Protection for I2C Bus Pins
      7. 9.3.7 Clock Stretching and Multiple Master Arbitration Support
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device Operation Considerations
        1. 9.4.1.1 B-Side Input Low (VIL/IILC/RILC)
          1. 9.4.1.1.1 VILC & IILC
          2. 9.4.1.1.2 RILC
        2. 9.4.1.2 Input and Output Leakage Current (IEXT-I/IEXT-O)
          1. 9.4.1.2.1 IEXT-I
          2. 9.4.1.2.2 IEXT-O
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Device Selection Guide
      2. 10.1.2 Special Considerations for the B-side
        1. 10.1.2.1 FET or Pass-Gate Translators
        2. 10.1.2.2 Buffered Translators/Level-shifters
    2. 10.2 Typical Application
      1. 10.2.1 Single Device
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Buffering Without Level-Shifting
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curve
      3. 10.2.3 Parallel Device Use Case
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedure
        3. 10.2.3.3 Application Curves
      4. 10.2.4 Series Device Use Case
        1. 10.2.4.1 Design Requirements
        2. 10.2.4.2 Detailed Design Procedure
        3. 10.2.4.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 ドキュメントのサポート
    2. 13.2 ドキュメントの更新通知を受け取る方法
    3. 13.3 サポート・リソース
    4. 13.4 商標
    5. 13.5 静電気放電に関する注意事項
    6. 13.6 Glossary
  14. 14メカニカル、パッケージ、および注文情報

RILC

The RILC parameter describes the maximum allowed pull-down resistance. This parameter comes from the combination of IILC and ICS, and states the maximum resistance that can satisfy the IILC parameter. Note that series resistors on the bus are going to affect this, as seen with other types of buffers (voltage delta across the series resistor. This increases the effective VOL of the external device pulling the bus low).

The calculated resistance of the internal pull-down FET of an external device can be calculated from the VOL and IOL measurements of the external device in question using Equation 1. Take care to consider any series resistors placed in the path from the TCA980x to any external device. Note that RPD is the calculated resistance of the internal pull-down FET, and not a resistor to ground. This is for determining if the external device's output characteristics meet the TCA980x RILC requirement (150 Ω).

Equation 1. TCA9802 Equation_1_SCPS266.gif