JAJSVR3C November   2013  – June 2024 UCC27524A-Q1

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. 概要 (続き)
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Supply Current
      2. 7.3.2 Input Stage
      3. 7.3.3 Enable Function
      4. 7.3.4 Output Stage
    4. 7.4 Low Propagation Delays and Tightly Matched Outputs
    5. 7.5 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VDD and Undervoltage Lockout
        2. 8.2.2.2 Drive Current and Power Dissipation
      3. 8.2.3 Application Curves
  10. Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 サード・パーティ製品に関する免責事項
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Revision History

Changes from Revision B (September 2015) to Revision C (June 2024)

  • 「特長」のデバイス HBM および CDM ESD 分類レベルを更新Go
  • 高速伝搬遅延を 13ns から 17ns に、高速立ち上がり時間を 7ns から 6ns に、高速立ち下がり時間を 6ns から 10ns に、最大動作接合部温度範囲を 140°C から 150°C にそれぞれ変更Go
  • 伝播遅延を 13ns から 17ns に変更Go
  • Changed ESD CDM rating from 750V to 1000VGo
  • Changed the DGN package RθJA from 71.8 to 48.9, RθJC(top) from 65.6 to 71.8, RθJB from 7.4 to 22.3, ψJT from 7.4 to 2.6, ψJB from 31.5 to 22.3, RθJC(bot) from 19.6 to 4.5. Changed the D package RθJA from 130.9 to 126.4, RθJC(top) from 80.0 to 67.0, RθJB from 71.4 to 69.9, ψJT from 21.9 to 19.2, ψJB from 70.9 to 69.1.Go
  • Add the IVDD, IVDDO, IDIS, RINx, VENx_H, VENx_L, VENx_HYS. Remove the I VDDq at INx=GND condition, VON at 25°C, VDD-VOH and VOL Changed the I VDDq at INx=VDD from 55μA (min), 110μA (typ), 175μA (max) to 300μA (typ), 450μA (max). Changed the VON from 3.7V (min), 4.2V (typ) , 4.65V (max) to 3.8V (min), 4.1V (typ), 4.4V (max). Changed the VOFF from 3.4V (min), 3.9V (typ) , 4.4V (max) to 3.5V (min), 3.8V (typ), 4.1V (max). Changed the VVDD_HYS from 0.2V (min), 0.3V (typ) , 0.5V (max) to 0.3V (typ). Changed the VINx_H from 1.9V (min), 2.1V (typ) , 2.3V (max) to 1.8V (min), 2V (typ), 2.3V (max). Changed the VINx_L from 1V (min), 1.2V (typ) , 1.4V (max) to 0.8V (min), 1V (typ), 1.2V (max). Changed the VINx_HYS from 0.7V (min), 0.9V (typ) , 1.1V (max) to 1V (typ). Changed the ROH from 2.5Ω (min), 5Ω (typ) , 7.5Ω (max) to 5Ω (typ), 8.5Ω (max). Changed the ROL from 0.15Ω (min), 0.5Ω (typ) , 1Ω (max) to 0.6Ω (typ), 1.1Ω (max).Go
  • Changed the tR from 7ns (typ), 18ns (max) to 6ns (typ), 10ns (max). Changed the tF from 6ns (typ), 10ns (max) to 10ns (typ), 14ns (max). Changed the tD1, tD2, tD3, tD4from 6ns (min), 13ns (typ), 23 ns (max) to 17ns (typ), 27ns (max). Changed the tM from 1ns (typ), 4 ns (max) to 1ns (typ), 2ns (max). Changed the tPWmin from 15ns (typ), 25ns (max) to 10ns (typ), 15ns (max).Go
  • Changed Typical Characteristics graphsGo
  • Changed Fast Propagation Delays from 13-ns to 17-ns and max Operating Junction Temperature Range from 140°C to 150°CGo
  • Changed the Functional Block DiagramGo
  • Changed the threshold voltage and hysteresisGo
  • Changed the Output Stage description Go
  • Changed the Low Propagation Delays and Tightly Matched Outputs Go
  • Changed the UVLO typical value from 4.25V to 4V and hysteresis from 350mV to 300mVGo
  • Changed the Application Curves Go
  • Changed propagation delay time from 13ns to 17nsGo

Changes from Revision A (January 2014) to Revision B (September 2015)

  • 「ESD 定格」表、「機能説明」セクション、「デバイスの機能モード」セクション、「アプリケーションと実装」セクション、「電源に関する推奨事項」セクション、「レイアウト」セクション、「デバイスおよびドキュメントのサポート」セクション、「メカニカル、パッケージ、および注文情報」セクションを追加。 Go

Changes from Revision * (November 2013) to Revision A (January 2014)

  • ドキュメントのステータスを製品プレビューから量産データへ変更 Go