6 Revision History
Changes from Revision E (August 2014) to Revision F (January 2025)
- ドキュメント全体にわたって表、図、相互参照の採番方法を更新Go
Changes from Revision D (August 2014) to Revision E (August 2014)
- パルス電流を 275A に増加Go
- Updated the SOA in
Figure 4-10
Go
Changes from Revision C (May 2013) to Revision D (August 2014)
- 「注文情報」表に 7 インチ リールを追加Go
- ケース温度を 25°C に保持した状態での消費電力のパラメータを追加Go
- パルス電流の条件を更新Go
- Updated
Figure 4-1
to a normalized RθJC curveGo
Changes from Revision B (November 2012) to Revision C (May 2013)
- Updated Mechanical stencilGo
Changes from Revision A (October 2012) to Revision B (November 2012)
- RDS(on) と VGS のグラフ、およびゲート電荷のグラフを変更Go
- Changed RθJA Max value From: 51 To: 50°C/WGo
- Changed the Typical MOSFET Characteristics sectionGo
Changes from Revision * (June 2012) to Revision A (October 2012)
- Changed the Transconductance TYP value From: 63S To: 71SGo
- Changed the Turn On and Turn Off Delay Time, Rise and Fall Time Test Conditions
From: IDS = 17A, RG = 2Ω To: IDS = 17A,
RG = 0ΩGo
- Changed the Qrr Reverse Recovery Charge TYP value From: 18nC To:
39nCGo