SCLK023 November   2023 SN54SC4T32-SEP

PRODUCTION DATA  

  1.   1
  2.   SN54SC4T32-SEP Production Flow and Reliability Report
  3.   Trademarks
  4. 1Texas Instruments Enhanced Product Qualification and Reliability Report
  5. 2Space Enhanced Plastic Production Flow
    1. 2.1 Device Introduction
    2. 2.2 SN54SC4T32-SEP Space Enhanced Plastic Production Flow
  6. 3Device Qualification
  7. 4Outgas Test Report

3 Device Qualification

The following is the device qualification summary.

Qualification by Similarity (Qualification Family)

A new device can be qualified either by performing full scale quality and reliability tests on the actual device or using previously qualified devices through "Qualification by Similarity" (QBS) rules. By establishing similarity between the new device and those qualified previously, repetitive tests are eliminated, allowing for timely production release. When adopting QBS methodology, the emphasis is on qualifying the differences between a previously qualified product and the new product under consideration.

The QBS rules for a technology, product, test parameters, or package shall define which attributes are required to remain fixed for the QBS rules to apply. The attributes which are expected and allowed to vary is reviewed and a QBS plan is developed, based on the reliability impact assessment above, specifying what subset of the full complement of environmental stresses is required to evaluate the reliability impact of those variations. Each new device is reviewed for conformance to the QBS rule sets applicable to that device. See JEDEC JESD47 for more information.

Table 3-1 Space Enhanced Products New Device Qualification Matrix
Note that qualification by similarity (“qualification family”) per JEDEC JESD47 is allowed.
DescriptionConditionSample Size Used and RejectsLots RequiredTest Method
ElectromigrationMaximum recommended operating conditionsN/AN/APer TI Design rules
Wire bond lifeMaximum recommended operating conditionsN/AN/APer TI Design rules
Electrical characterizationTI data sheet103N/A
Electrostatic discharge sensitivityHBM3 units/voltage1EIA/JESD22-A114
CDMEIA/JESD22-C101
Latch-upPer technology3/01EIA/JESD78
Physical dimensionsTI data sheet5/01EIA/JESD22- B100
Thermal impedanceTheta-JA on boardPer pin-packageN/AEIA/JESD51
Bias life test125°C / 1000 hours or equivalent77/03JESD22-A108*
Biased HAST130°C / 85% / 96 hours77/03JESD22-A110*
Extended biased HAST130°C / 85% / 250 hours (for reference)77/01JESD22-A110*
Unbiased HAST130°C / 85% / 192 hours77/03JESD22-A118*
Temperature cycle-65°C to +150°C non-biased for 500 cycles77/03JESD22-A104*
Solder heat260°C for 10 seconds22/01JESD22-B106
Resistance to solventsInk symbol only12/01JESD22-B107
SolderabilityCondition A (steam age for 8 hours)22/01ANSI/J-STD-002-92
FlammabilityMethod A or Method B5/01UL-1964
Bond shearPer wire size5 units × 30/0 bonds3JESD22-B116
Bond pull strengthPer wire size5 units × 30/0 bonds3ASTM F-459
Die shearPer die size5/03TM 2019
High Temp storage150 °C / 1000 hours15/03JESD22-A103-A*
Moisture sensitivitySurface mount only121J-STD-020-A*
Radiation response characterizationTotal ionization dose, single-event latch-up5 units / dose level1MIL-STD-883/Method 1019
Outgassing characterizationTML (Total Mass Lost), CVCM (Collected Volatile Condensable material)51ASTM E595
  1. *Precondition performed per JEDEC Std. 22, Method A112/A113.