2 Test Method

The devices under test (DUTs) were put through a 240-hour burn-in with the units biased and operational at 125°C ambient prior to the radiation testing.

Irradiation and electrical testing were done at Texas Instruments Radiation Test Facility in Santa Clara, California.

The DUTs were placed in socketed bias boards, powered up and programmed using Texas Instruments USB2ANY module and TICS Pro software prior to irradiation⁽⁵⁾. The supply voltage was set to 3.4 V as measured on the DUT boards. The DUTs were configured so that the PLL2 loop was active and the signal to the Divider and Delay blocks was at 3.2 GHz. Different delays and frequency dividers were used on the different outputs to exercise the different components of the control circuits. The outputs were configured so that at all of the output configurations options, CML, LVPECL, LCPECL, HSDS, LVDS, and 2xLVCMOS were exercised on at least one output each.

DUT #3 went through 48-hour RTA with the DUT in the bias board and powered and configured to the same conditions as during the irradiation.

The DUTs were electrically tested at 0, 50 and 100 krad(Si) and DUT #3 was tested after the 48-hour RTA. All specified data sheet and SMD parameters were tested. In addition to the specified parameters, the test program tests many other parameters to ensure the proper operation of the device. Limits are set using a six sigma baseline. Tests are performed with the supply voltage at 3.135, 3.3 and 3.465 V. There are over 7000 parameters tested.