SNOK006 April   2024 TPS7H6013-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Unbiased
      2. 2.3.2 Biased
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Results Summary
    2. 3.2 Data Sheet Electrical Parameters
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix: HDR TID Report

1.1 Product Description

The TPS7H6013-SP is a 60V radiation-hardness-assured, high voltage gate driver for GaN FETs for space applications. The TPS7H6013-SP is designed for high frequency, high-efficiency applications. The driver features adjustable dead time capability, small 30ns propagation delay and 5.5ns high-side and low-side matching. This part also includes internal high-side and low-side LDOs which specifies a drive voltage of 5V regardless of supply voltage. The TPS7H6013-SP is packaged in a ceramic 48-HBX (CFP) package.