SBOK064 October   2022 SN54SLC8T245-SEP

 

  1.   SN54SLC8T245-SEP Radiation Tolerant 8-Bit Dual-Supply Bus Transceiver Voltage Translation TID Report
  2.   Trademarks
  3. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  4. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Biased
    4. 2.4 Test Configuration and Condition
  5. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Specification Compliance Matrix
  6. 4Reference Documents
  7.   A Appendix: HDR TID Report Data

Test Description and Facilities

The SN54SLC8T245-SEP HDR exposure was performed on biased and unbiased devices in a Co-60 gamma cell at TI facility in Dallas, Texas. The un-attenuated dose rate of this cell is 239.5 rads(Si)/s [238 to 241 rad(Si)/s]. After exposure, the devices were packed in dry ice (per MIL-STD-883 Method 1019.9 section 3.10) and full post radiation electrical evaluation using Texas Instruments ATE was conducted. ATE test limits are set per data sheet electrical limits based on qualification and characterization data. Post radiation measurements were taken within 30 minutes of removing the devices from the dry ice container. The devices were allowed to reach room temperature prior to electrical post radiation measurements.