SBOK078 October   2023 SN54SC4T08-SEP

PRODUCTION DATA  

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE)
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 SEL Results
    2. 5.2 Event Rate Calculations
  9. 6Summary
  10. 7References

1 Overview

SN54SC4T08-SEP contains four independent 2- input AND Gates . Each gate performs the Boolean function Y = A × B in positive logic. The output level is referenced to the supply voltage (VCC) and supports 1.2-V, 1.8-V, 2.5-V, 3.3-V, and 5-V CMOS levels.

The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example 1.2 V input to 1.8 V output or 1.8 V input to 3.3 V output). Additionally, the 5-V tolerant input pins enable down translation (for example, 3.3 V to 2.5 V output).

Table 1-1 Overview Information1
DescriptionDevice Information
TI Part Number SN54SC4T08-SEP
MLS NumberSN54SC4T08MPWTSEP
Device Function Radiation-tolerant, 4-channel, 2-input positive AND gate with logic-level shifter
TechnologyLBC9
Exposure Facility Facility for Rare Isotope Beams (FRIB) at Michigan State University – FRIB Single Event Effects (FSEE) Facility
Heavy Ion Fluence per Run1 × 107 ions / cm2
Irradiation Temperature 125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.